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Número de pieza | HN58S256AT-20 | |
Descripción | 256 k EEPROM (32-kword x 8-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HN58S256AT-20 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z)
Rev. 2.0
Nov. 1997
Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-
word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
technology. It also has a 64-byte page programming function to make the write operations faster.
Features
• Single supply: 2.2 to 3.6 V
• Access time: 150 ns (max)/200 ns (max)
• Power dissipation:
Active: 10 mW/MHz, (typ)
Standby: 36 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 15 ms (max)
• Automatic page write (64 bytes): 15 ms (max)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Industrial versions (Temperatur range:–40 to 85˚C) are also available.
1 page HN58S256A Series
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*1
Cin — — 6
Output capacitance*1
Cout
— — 12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
AC Characteristics (Ta = 0 to +70 °C, VCC = 2.2 to 3.6 V)
Test Conditions
• Input pulse levels: 0.4 V to 1.9 V (VCC ≤ 2.7V), 0.4V to 2.4 V (VCC > 2.7 V)
• Input rise and fall time: ≤ 5 ns
• Input timing reference levels: 0.8, 1.8 V
• Output load: 1TTL Gate +100 pF
• Output reference levels: 1.1 V, 1.1 V (VCC ≤ 2.7V),1.5 V, 1.5 V (VCC > 2.7 V)
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*1
HN58S256A
-15 -20
Symbol Min Max Min
tACC — 150 —
tCE — 150 —
tOE 10 80 10
tOH 0 — 0
tDF 0 100 0
Max
200
200
100
—
100
Unit
ns
ns
ns
ns
ns
Test conditions
CE = OE = VIL, WE = VIH
OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = VIL, WE = VIH
5 Page HN58S256A Series
Software Data Protection Timing Waveform (1) (in protection mode)
VCC
CE
WE
Address
Data
5555
AA
2AAA
55
tBLC
5555 Write address
A0 Write data
tWC
Software Data Protection Timing Waveform (2) (in non-protection mode)
VCC tWC Normal active
mode
CE
WE
Address
Data
5555 2AAA 5555 5555 2AAA 5555
AA 55 80 AA 55 20
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet HN58S256AT-20.PDF ] |
Número de pieza | Descripción | Fabricantes |
HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) | Hitachi Semiconductor |
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