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PDF HN58V1001T-25 Data sheet ( Hoja de datos )
| Número de pieza | HN58V1001T-25 | |
| Descripción | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN58V1001 Series
1M EEPROM (128-kword × 8-bit)
Ready/Busy and RES function
ADE-203-314G (Z)
Rev. 7.0
Oct. 31, 1997
Description
The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-
bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming
function to make the write operations faster.
Features
• Single 3 V supply: 2.7 V to 5.5 V
• Access time: 250 ns (max)
• Power dissipation
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 15 ms (max)
• Automatic page write (128 bytes): 15 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 104 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin
1 page  
HN58V1001 Series
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*1
Cin — — 6
Output capacitance*1
Cout
— — 12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
AC Characteristics (Ta = 0 to +70 °C, VCC = 2.7 V to 5.5 V)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V
0 V to VCC (RES pin)
• Input rise and fall time: 20 ns
• Output load: 1TTL Gate +100 pF
• Reference levels for measuring timing: 0.8 V, 1.8 V
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*1
RES low to output float*1
RES to output delay
Symbol
t ACC
t CE
t OE
t OH
t DF
t DFR
t RR
HN58V1001-25
Min Max
— 250
— 250
10 120
0—
0 50
0 350
0 600
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE = OE = VIL, WE = VIH
OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
5
5 Page 
Page Write Timing Waveform (2) (CE Controlled)
*6
Address
A0 to A16
CE
WE
OE
tAS tAH
tCW
tDL
tWS tWH
tOES
tDS
tDH
Din
RDY/Busy
High-Z
tDB
tRP
tBLC
RES
VCC
tRES
HN58V1001 Series
tBL
tOEH
tWC
tDW
High-Z
11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet HN58V1001T-25.PDF ] | |
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