HN58V256AFP-12 PDF даташит
Спецификация HN58V256AFP-12 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)». |
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Детали детали
Номер произв | HN58V256AFP-12 |
Описание | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
Производители | Hitachi Semiconductor |
логотип |
24 Pages
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HN58V256A Series
HN58V257A Series
256k EEPROM (32-kword × 8-bit)
Ready/Busy and RES function (HN58V257A)
ADE-203-357D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as
32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
• Single 3 V supply: 2.7 to 5.5 V
• Access time: 120 ns max
• Power dissipation:
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Ready/Busy (only the HN58V257A series)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin (only the HN58V257A series)
• Industrial versions (Temperature range: – 20 to 85˚C and – 40 to 85˚C) are also available.
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HN58V256A Series, HN58V257A Series
Ordering Information
Type No.
HN58V256AFP-12
HN58V256AT-12
HN58V257AT-12
Access time
120 ns
120 ns
120 ns
Package
400 mil 28-pin plastic SOP (FP-28D)
28-pin plastic TSOP (TFP-28DB)
8 × 14 mm2 32-pin plastic TSOP (TFP-32DA)
Pin Arrangement
HN58V256AFP Series
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
A2
28 VCC
A1
27 WE
26 A13
A0
I/O0
I/O1
25 A8
24 A9
I/O2
VSS
I/O3
23 A11 I/O4
22 OE
I/O5
I/O6
21 A10 I/O7
20 CE
CE
A10
19 I/O7
I/O0 11
18 I/O6
I/O1 12
17 I/O5
I/O2 13
16 I/O4
VSS 14
15 I/O3
A2
A1
A0
(Top view)
NC
I/O0
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
I/O7
NC
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
HN58V256AT Series
(Top view)
HN58V257AT Series
(Top view)
14 A3
13 A4
12 A5
11 A6
10 A7
9 A12
8 A14
7 VCC
6 WE
5 A13
4 A8
3 A9
2 A11
1 OE
16 A3
15 A4
14 A5
13 A6
12 A7
11 A12
10 A14
9 RDY/Busy
8 VCC
7 RES
6 WE
5 A13
4 A8
3 A9
2 A11
1 OE
2
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HN58V256A Series, HN58V257A Series
Pin Description
Pin name
Function
A0 to A14
Address input
I/O0 to I/O7
Data input/output
OE Output enable
CE Chip enable
WE Write enable
VCC
VSS
RDY/Busy*1
Power supply
Ground
Ready busy
RES*1
Reset
NC No connection
Note: 1. This function is supported by only the HN58V257A series.
Block Diagram
Note: 1. This function is supported by only the HN58V257A series.
VCC
VSS
RES *1
OE
CE
WE
RES *1
A0
to
A5
A6
to
A14
High voltage generator
Control logic and timing
Address
buffer and
latch
Y decoder
X decoder
I/O0 to I/O7
I/O buffer
and
input latch
Y gating
Memory array
Data latch
RDY/Busy *1
3
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Номер в каталоге | Описание | Производители |
HN58V256AFP-12 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) | Hitachi Semiconductor |
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