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HP4410DY PDF даташит

Спецификация HP4410DY изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «10A/ 30V/ 0.0135 Ohm/ Single N-Channel/ Logic Level Power MOSFET».

Детали детали

Номер произв HP4410DY
Описание 10A/ 30V/ 0.0135 Ohm/ Single N-Channel/ Logic Level Power MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HP4410DY Даташит, Описание, Даташиты
Data Sheet
December 2001
HP4410DY
10A, 30V, 0.0135 Ohm, Single N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4410DY
SO-8
P4410DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4410DYT.
Features
• Logic Level Gate Drive
• 10A, 30V
• rDS(ON) = 0.0135at ID = 10A, VGS = 10V
• rDS(ON) = 0.020at ID = 8A, VGS = 4.5V
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
SOURCE(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
Packaging
SO-8
©2001 Fairchild Semiconductor Corporation
HP4410DY Rev. B









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HP4410DY Даташит, Описание, Даташиты
HP4410DY
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (10µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
HP4410DY
30
30
±16
10
50
2.5
0.02
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TA = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
BVDSS
VGS(TH)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA (Figure 9)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
IDSS
IGSS
rDS(ON)
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TA = 55oC
VGS = ±16V
ID = 8A, VGS = 4.5V (Figures 6, 8)
ID = 10A, VGS = 10V (Figures 6, 8)
VDD = 25V, ID 1A,
RL = 25, VGEN = 10V,
RGS = 6
VDS = 15V, VGS = 10V, ID 10A
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 4)
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
CRSS
RθJA
Pulse Width < 10s (Figure 11)
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD ISD = 2.3A (Figure 7)
trr ISD = 2.3A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
30 - - V
1- -V
- - 1 µA
- - 25 µA
- - 100 nA
-
0.015 0.020
-
0.011 0.0135
- 15 30 ns
- 9 20 ns
- 70 100 ns
- 20 80 ns
- 35 60 nC
- 7.5 - nC
- 5.8 - nC
- 1600 -
pF
- 685 -
pF
- 115 -
pF
- - 50 oC/W
MIN TYP MAX UNITS
- 0.75 1.1 V
- 50 80 ns
©2001 Fairchild Semiconductor Corporation
HP4410DY Rev. B









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HP4410DY Даташит, Описание, Даташиты
HP4410DY
Typical Performance Curves Unless Otherwise Specified
50
VGS = 10V - 5V
4V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
3V
20
10
0
02468
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
10
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
0
TA = 125oC
-55oC
25oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 2. TRANSFER CHARACTERISTICS
5
0.030
PULSE DURATION = 80µs
0.025 DUTY CYCLE = 0.5% MAX
0.020
0.015
VGS = 4.5V
0.010
0.005
VGS = 10V
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4200
3500
2800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
2100
1400
700
CRSS
COSS
CISS
0
0 6 12 18 24 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VPDUSL=SE15DVURATION = 80µs
IDDU=T1Y0ACYCLE = 0.5% MAX
8
6
4
2
0
0 9 18 27 36 45
Qg, GATE CHARGE (nC)
FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE
2.0
PVUGLSS=E1D0UVRATION = 80µs
DIDUT=Y10CAYCLE = 0.5% MAX
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HP4410DY Rev. B










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