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Datasheet HM31-20100 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HM31-20100 | Encapsulated Current Sense Transformers MODEL HM31 SERIES
Encapsulated Current Sense Transformers
FEATURES AND BENEFITS
• • • • •
Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. output voltage) Cust | ETC | transformer |
2 | HM31-20100L | Encapsulated Current Sense Transformers MODEL HM31 SERIES
Encapsulated Current Sense Transformers
FEATURES AND BENEFITS
• • • • •
Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. output voltage) Cust | ETC | transformer |
HM3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HM3-6514-9 | 1024 x 4 CMOS RAM HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing effic Intersil Corporation cmos | | |
2 | HM3-6514B-9 | 1024 x 4 CMOS RAM HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing effic Intersil Corporation cmos | | |
3 | HM3-6514S-9 | 1024 x 4 CMOS RAM HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing effic Intersil Corporation cmos | | |
4 | HM3-65764 | High Speed CMOS SRAM Matra Design Semiconductor ram | | |
5 | HM3-65787 | High Speed CMOS SRAM Matra Design Semiconductor ram | | |
6 | HM3-65788 | High Speed CMOS SRAM Matra Design Semiconductor ram | | |
7 | HM3-65789 | High Speed CMOS SRAM Matra Design Semiconductor ram | |
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Número de pieza | Descripción | Fabricantes | |
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