PDF HM5117805LTT-5 Data sheet ( Hoja de datos )

Número de pieza	HM5117805LTT-5
Descripción	16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
Fabricantes	Elpida Memory
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No Preview Available ! HM5117805 Series 16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z)) Jun. 27, 2001 Description The HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP. Features • Single 5 V (±10%) • Access time: 50 ns/60 ns/70 ns (max) • Power dissipation  Active mode: 605 mW/550 mW/495 mW (max)  Standby mode : 11 mW (max) : 0.83 mW (max) (L-version) • EDO page mode capability • Long refresh period  2048 refresh cycles : 32 ms : 128 ms (L-version) • 4 variations of refresh  RAS-only refresh  CAS-before-RAS refresh  Hidden refresh  Self refresh (L-version) • Battery backup operation (L-version) Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. 1 page Absolute Maximum Ratings Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature Symbol VT VCC Iout PT Topr Tstg HM5117805 Series Value –1.0 to +7.0 –1.0 to +7.0 50 1.0 0 to +70 –55 to +125 Unit V V mA W °C °C Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Symbol Supply voltage VCC Input high voltage VIH Input low voltage VIL Note: 1. All voltage referred to VSS. Min 4.5 2.4 –1.0 Typ Max Unit Note 5.0 5.5 V 1 — 6.5 V 1 — 0.8 V 1 Data Sheet E0156H10 5 5 Page HM5117805 Series EDO Page Mode Cycle HM5117805 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit EDO page mode cycle time t HPC EDO page mode RAS pulse width tRASP Access time from CAS precharge tCPA RAS hold time from CAS precharge tCPRH Output data hold time from CAS low tDOH CAS hold time referred OE t COL CAS to OE setup time t COP Read command hold time from CAS tRCHC precharge 20 — 25 — 30 — ns — 100000 — 100000 — 100000 ns — 28 — 35 — 40 ns 28 — 35 — 40 — ns 3— 3— 3— ns 7— 10 — 13 — ns 5— 5— 5— ns 28 — 35 — 40 — ns Notes 19 16 9, 17 9, 17 EDO Page Mode Read-Modify-Write Cycle HM5117805 -5 -6 Parameter Symbol Min Max Min EDO page mode read- modify-write tHPRWC 57 — 68 cycle time WE delay time from CAS precharge tCPW 45 — 54 -7 Max Min — 79 — 62 Max Unit ns ns Notes 14 Refresh Parameter Refresh period Refresh period (L-version) Symbol t REF t REF Max 32 128 Unit ms ms Note 2048 cycles 2048 cycles Data Sheet E0156H10 11 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HM5117805LTT-5	16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh	Elpida Memory
HM5117805LTT-6	16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh	Elpida Memory
HM5117805LTT-7	16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh	Elpida Memory

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