PDF HM514400BL Data sheet ( Hoja de datos )

Número de pieza	HM514400BL
Descripción	1/048/576-word X 4-bit Dynamic Random Access Memory
Fabricantes	Hitachi Semiconductor
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No Preview Available ! ADE-203-269A (Z) HM514400B/BL Series HM514400C/CL Series 1,048,576-word × 4-bit Dynamic Random Access Memory Rev. 1.0 Nov. 29, 1994 The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576- word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/BL, HM514400C/CL offer Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM514400B/BL, HM514400C/CL to be packaged in standard 300-mil 26-pin plastic SOJ, standard 400-mil 20-pin plastic ZIP and 26- pin plastic TSOP II. Features • Single 5 V (±10%) • High speed — Access time 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (max) 0.55 mW (max) (L-version) • Fast page mode capability • 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version) • 3 variations of refresh — RAS-only refresh — CAS-before-RAS refresh — Hidden refresh • Test function • Battery back up operation — HM514400BL Series (L-version) — HM514400CL Series (L-version) 1 page Block Diagram HM514400B/BL, HM514400C/CL Series RAS CAS RAS Control Circuit CAS Control Circuit WE WE Control Circuit OE OE Control Circuit I/O1 I/O1 Buffer I/O2 I/O2 Buffer I/O3 I/O3 Buffer I/O4 I/O4 Buffer Row Driver Row Row Driver Driver Row Driver Row Driver Row Row Driver Driver Row Driver Row Decoder & Peripheral Circuit Row Driver Row Row Driver Driver Row Driver Row Driver Row Row Driver Driver Row Driver Row Address Buffer Column Address Buffer Address A0–A9 5 5 Page Read-Modify-Write Cycle Parameter Read-modify-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time OE hold time from WE HM514400B/BL, HM514400C/CL Series HM514400B/BL, HM514400C/CL -6 -7 -8 Symbol Min Max Min Max Min Max Unit Notes tRWC tRWD tCWD tAWD tOEH 150 — 180 — 200 — ns 80 — 95 — 105 — ns 10 35 — 45 — 45 — ns 10 50 — 60 — 65 — ns 10 15 — 20 — 20 — ns Refresh Cycle HM514400B/BL, HM514400C/CL -6 -7 -8 Parameter CAS setup time (CBR refresh cycle) CAS hold time (CBR refresh cycle) RAS precharge to CAS hold time CAS precharge time in normal mode Symbol tCSR tCHR tRPC tCPN Min 10 10 10 10 Max Min — 10 — 10 — 10 — 10 Max Min — 10 — 10 — 10 — 10 Max Unit Notes — ns — ns — ns — ns Fast Page Mode Cycle HM514400B/BL, HM514400C/CL -6 -7 -8 Parameter Symbol Min Max Min Max Min Max Unit Notes Fast page mode cycle time tPC 40 — 45 — 50 — ns Fast page mode CAS precharge time tCP 10 — 10 — 10 — ns Fast page mode RAS pulse width tRASC — 100000 — 100000 — 100000 ns 12 Access time from CAS precharge tACP — 35 — 40 — 45 ns 3, 13, 17 RAS hold time from CAS precharge tRHCP 35 — 40 — 45 — ns 11 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HM514400B	1/048/576-word X 4-bit Dynamic Random Access Memory	Hitachi Semiconductor
HM514400BL	1/048/576-word X 4-bit Dynamic Random Access Memory	Hitachi Semiconductor

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