HM628512BFP Datasheet PDF - Hitachi Semiconductor
| Part Number | HM628512BFP | |
| Description | 4 M SRAM (512-kword x 8-bit) | |
| Manufacturers | Hitachi Semiconductor | |
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There is a preview and HM628512BFP download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
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HM628512BFP Series
4 M SRAM (512-kword × 8-bit)
ADE-203-1078B (Z)
Rev. 2.0
Nov. 23, 1999
Description
The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged
in standard 32-pin SOP.
Features
• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 2 mW (max)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
Ordering Information
Type No.
HM628512BFP-5
HM628512BFP-7
Access time
55 ns
70 ns
Package
525-mil 32-pin plastic SOP (FP-32D)
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HM628512BFP Series
DC Characteristics (Ta = –20 to +70°C, VCC = 5 V ±10% , VSS = 0 V)
Parameter
Symbol Min Typ*1 Max Unit Test conditions
Input leakage current
|ILI|
—— 1
µA Vin = VSS to VCC
Output leakage current
|ILO| — — 1 µA CS = VIH or OE = VIH or
WE = VIL, VI/O = VSS to VCC
Operating power supply current: DC ICC
—8
15 mA CS = VIL,
others = VIH/VIL, II/O = 0 mA
Operating power supply current
ICC1 — 40 60 mA Min cycle, duty = 100%
CS = VIL, others = VIH/VIL
II/O = 0 mA
Operating power supply current
ICC2 — 10 20 mA Cycle time = 1 µs,
duty = 100%
II/O = 0 mA, CS ≤ 0.2 V
VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V
Standby power supply current: DC ISB
—1 3
mA CS = VIH
Standby power supply current (1): DC ISB1
— 300 400 µA Vin ≥ 0 V, CS ≥ VCC – 0.2 V
Output low voltage
VOL
— — 0.4 V
IOL = 2.1 mA
Output high voltage
VOH
2.4 — — V
IOH = –1.0 mA
Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Typ
Max
Input capacitance*1
Cin
—
8
Input/output capacitance*1 CI/O
—
10
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HM628512BFP electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HM628512BFP.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| HM628512BFP | The function is 4 M SRAM (512-kword x 8-bit). Hitachi Semiconductor | |
| HM628512BFP-5 | The function is 4 M SRAM (512-kword x 8-bit). Hitachi Semiconductor | |
| HM628512BFP-7 | The function is 4 M SRAM (512-kword x 8-bit). Hitachi Semiconductor | |
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