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What is HM62V16256CI?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Wide Temperature Range Version4 M SRAM (256-kword x 16-bit)".


HM62V16256CI Datasheet PDF - Hitachi Semiconductor

Part Number HM62V16256CI
Description Wide Temperature Range Version4 M SRAM (256-kword x 16-bit)
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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HM62V16256CI Series
Wide Temperature Range Version
4 M SRAM (256-kword × 16-bit)
ADE-203-1230A (Z)
Rev. 1.0
Feb. 6, 2001
Description
The Hitachi HM62V16256CI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62V16256CI Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic
TSOPII.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 70 ns (max)
Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85°C

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HM62V16256CI equivalent
Operation Table
CS1 CS2 WE OE UB LB I/O0 to I/O7
H×
×
××
×
High-Z
× L × × × × High-Z
× × × × H H High-Z
L H H L L L Dout
L H H L H L Dout
L H H L L H High-Z
L H L × L L Din
L H L × H L Din
L H L × L H High-Z
L H H H × × High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
HM62V16256CI Series
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Storage temperature range
VCC
VT
PT
Tstg
Storage temperature range under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*1 to VCC + 0.3*2
1.0
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol Min
Supply voltage
VCC
VSS
Input high voltage VCC = 2.2 V to 2.7 V VIH
VCC = 2.7 V to 3.6 V VIH
Input low voltage VCC = 2.2 V to 2.7 V VIL
VCC = 2.7 V to 3.6 V VIL
Ambient temperature range
Ta
2.2
0
2.0
2.2
–0.2
–0.3
–40
Note: 1. VIL min: –3.0 V for pulse half-width 30 ns.
Typ
2.5/3.0
0
Max Unit
3.6 V
0V
VCC + 0.3
VCC + 0.3
0.4
V
V
V
0.6 V
85 °C
Note
1
1
5


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HM62V16256CI electronic component.


Information Total 18 Pages
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HM62V16256CThe function is 4 M SRAM (256-kword x 16-bit). Hitachi SemiconductorHitachi Semiconductor
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