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PDF HM62V16256CLTT-7 Data sheet ( Hoja de datos )
| Número de pieza | HM62V16256CLTT-7 | |
| Descripción | 4 M SRAM (256-kword x 16-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HM62V16256C Series
4 M SRAM (256-kword × 16-bit)
ADE-203-1099D (Z)
Rev. 1.0
Jan. 31, 2001
Description
The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16256C
Series has realized higher density, higher performance and low power consumption by employing CMOS
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
1 page  
Operation Table
CS1 CS2 WE OE UB LB I/O0 to I/O7
H×
×
××
×
High-Z
× L × × × × High-Z
× × × × H H High-Z
L H H L L L Dout
L H H L H L Dout
L H H L L H High-Z
L H L × L L Din
L H L × H L Din
L H L × L H High-Z
L H H H × × High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
HM62V16256C Series
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Storage temperature range
VCC
VT
PT
Tstg
Storage temperature range under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*1 to VCC + 0.3*2
1.0
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol Min
Supply voltage
VCC
VSS
Input high voltage VCC = 2.2 V to 2.7 V VIH
VCC = 2.7 V to 3.6 V VIH
Input low voltage VCC = 2.2 V to 2.7 V VIL
VCC = 2.7 V to 3.6 V VIL
Ambient temperature range
Ta
2.2
0
2.0
2.0
–0.2
–0.3
–20
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
2.5/3.0
0
—
—
—
—
—
Max Unit
3.6 V
0V
VCC + 0.3
VCC + 0.3
0.4
V
V
V
0.6 V
70 °C
Note
1
1
5
5 Page 
Timing Waveform
Read Cycle
Address
CS1
t RC
Valid address
tAA
tACS1
tCLZ1*2, 3
CS2
tACS2
tCLZ2*2, 3
LB, UB
OE
Dout
tBA
tBLZ*2, 3
tOE
High impedance
tOLZ*2, 3
HM62V16256C Series
tCHZ1*1, 2, 3
tCHZ2*1, 2, 3
tBHZ*1, 2, 3
tOHZ*1, 2, 3
tOH
Valid data
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet HM62V16256CLTT-7.PDF ] | |
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