|
|
PDF HM62W16255HLJP-12 Data sheet ( Hoja de datos )
| Número de pieza | HM62W16255HLJP-12 | |
| Descripción | 4M High Speed SRAM (256-kword x 16-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HM62W16255HLJP-12 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
|
No Preview Available !
HM62W16255H Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-751D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. The
HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density
surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 12/15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 180/160 mA (max)
• TTL standby current: 60/50 mA (max)
• CMOS standby current: 5 mA (max)
: 1mA (max) (L-version)
• Data retension current: 0.6 mA (max) (L-version)
• Data retension voltage: 2.0 V (min) (L-version)
• Center VCC and VSS type pinout
1 page  
HM62W16255H Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
VSS * 4
3.0 3.3
00
Input voltage
VIH 2.2 —
VIL
–0.5*1
—
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current
Output leakage
current*1
|ILI| — — 2
|ILO| — — 2
µA Vin = VSS to VCC
µA Vin = VSS to VCC
Operating power
supply current
12 ns cycle ICC
Standby power supply
current
15 ns cycle ICC
12 ns cycle ISB
15 ns cycle ISB
I SB1
— — 180 mA Min cycle
CS = VIL, Iout = 0 mA
Other inputs = VIH/VIL
— — 160
— — 60 mA Min cycle, CS = VIH,
Other inputs = VIH/VIL
— — 50
— 0.05 5
mA f = 0 MHz
VCC ≥ CS ≥ VCC – 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC – 0.2 V
—*2 0.05*2 1.0*2
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Note: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
IOL = 8 mA
IOH = –4 mA
5
5 Page 
Write Timing Waveform (1) (LB, UB Controlled)
Address
WE*3
CS*3
tWC
Valid address
tAW
tAS
tWP
tCW
HM62W16255H Series
tWR
OE
LB
UB
Dout
(Lower byte)
Dout
(Upper byte)
Din
(Lower byte)
Din
(Upper byte)
tLBW
tWHZ
tOHZ
tUBW
tOLZ
tOW
High impedance
High impedance
tDW tDH
Valid data
tDW tDH
Valid data
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HM62W16255HLJP-12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HM62W16255HLJP-12 | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
| HM62W16255HLJP-15 | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |