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PDF HM62W16255HTTI-15 Data sheet ( Hoja de datos )
| Número de pieza | HM62W16255HTTI-15 | |
| Descripción | 4M High Speed SRAM (256-kword x 16-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HM62W16255HI Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1038B (Z)
Rev. 2.0
Jan. 20, 2000
Description
The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 50 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range: –40 to 85°C
1 page  
HM62W16255HI Series
Recommended DC Operating Conditions (Ta = –40 to +85°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
VSS * 4
3.0 3.3
00
Input voltage
VIH 2.2 —
VIL
–0.5*1
—
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
3.6
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
DC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current
Output leakage
current*1
|ILI| — — 2
|ILO| — — 2
µA Vin = VSS to VCC
µA Vin = VSS to VCC
Operating power
supply current
15 ns cycle ICC
Standby power supply 15 ns cycle ISB
current
I SB1
—
—
—
— 160 mA
— 50
0.05 5
mA
mA
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Note: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.
Min cycle
CS = VIL, Iout = 0 mA
Other inputs = VIH/VIL
Min cycle, CS = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS ≥ VCC – 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC – 0.2 V
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O
——
Note: 1. This parameter is sampled and not 100% tested.
Max Unit
6 pF
8 pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
5 Page 
Write Timing Waveform (2) (WE Controlled)
Address
WE*3
CS*3
tWC
Valid address
tAW
tAS
tWP
tCW
HM62W16255HI Series
tWR
OE
LB, UB
Dout
(Lower/Upper
byte)
Din
(Lower/Upper
byte)
tLBW
tUBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance
tDW tDH
Valid data
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HM62W16255HTTI-15.PDF ] | |
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