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PDF HM62W16258BI Data sheet ( Hoja de datos )

Número de pieza HM62W16258BI
Descripción 4 M SRAM (256-kword x 16-bit)
Fabricantes Hitachi Semiconductor 
Logotipo Hitachi Semiconductor Logotipo



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HM62W16258BI Series
4 M SRAM (256-kword × 16-bit)
ADE-203-1072A (Z)
Rev. 1.0
Jun. 10, 1999
Description
The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62W16258BI Series has realized higher density, higher performance and low power consumption by
employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.3 V supply: 3.3 V ± 0.3 V
Fast access time: 70 ns (max)
Power dissipation:
Active: 9.9 mW (typ)
Standby: 3.3 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
Temperature range: –40 to 85°C
Ordering Information
Type No.
HM62W16258BLTTI-7
Access time
70 ns
Package
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)

1 page




HM62W16258BI pdf
HM62W16258BI Series
DC Characteristics
Parameter
Symbol Min Typ*1 Max Unit Test conditions
Input leakage current
|ILI| —
—1
µA Vin = VSS to VCC
Output leakage current
|ILO| —
—1
µA CS = VIH or OE = VIH or WE = VIL, or
LB = UB =VIH,, VI/O = VSS to VCC
Operating current
ICC — — 20 mA CS = VIL, Others = VIH/VIL, II/O = 0 mA
Average HM62W16258BI-7 ICC1
operating
current
— 70 mA Min. cycle, duty = 100%,
II/O = 0 mA, CS = VIL,
Others = VIH/VIL
I CC2
3
15 mA Cycle time = 1 µs, duty = 100%,
II/O = 0 mA, CS 0.2 V,
VIH VCC – 0.2 V, VIL 0.2 V
Standby current
ISB — — 0.3 mA CS = VIH
Standby current
ISB1 — 1 40 µA 0 V Vin
CS VCC – 0.2 V
Output high voltage
VOH 2.4 — — V IOH = –1 mA
VCC – 0.2 — — V IOH = –100 µA
Output low voltage
VOL
— 0.4 V IOL = 2 mA
— — 0.2 V IOL = 100 µA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ Max
Input capacitance
Cin — — 8
Input/output capacitance CI/O
— — 10
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions Note
Vin = 0 V
1
VI/O = 0 V
1
5

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HM62W16258BI arduino
Write Cycle (3) (LB, UB Clock, OE = VIH)
Address
CS
LB, UB
tAS*6
tWC
Valid address
tAW
tCW*5
tBW
HM62W16258BI Series
tWR*7
WE
Din
Dout
tWP*4
tDW tDH
Valid data
High impedance
11

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