|
|
PDF HM62W16258BLTT-5SL Data sheet ( Hoja de datos )
| Número de pieza | HM62W16258BLTT-5SL | |
| Descripción | 4 M SRAM (256-kword x 16-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HM62W16258BLTT-5SL (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
HM62W16258B Series
4 M SRAM (256-kword × 16-bit)
ADE-203-976B (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
Active: 9.9 mW (typ)
Standby: 3.3 µW (typ)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
1 page  
Operation Table
CS WE OE UB LB
H× × × ×
× × × HH
L HL L L
L HL HL
L HL L H
LL×LL
L L × HL
LL×LH
L HH× ×
Note: H: VIH, L: VIL, ×: VIH or VIL
I/O0 to I/O7
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
HM62W16258B Series
I/O8 to I/O15
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Read
Lower byte read
Upper byte read
write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Storage temperature range
VCC
VT
PT
Tstg
Storage temperature range under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*1 to VCC + 0.3*2
1.0
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC
VSS
VIH
VIL
Ta
3.0
0
2.0
–0.3
0
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
3.3
0
—
—
—
Max
3.6
0
VCC + 0.3
0.8
70
Unit
V
V
V
V
°C
Note
1
5
5 Page 
Write Cycle (2) (CS Clock, OE = VIH)
Address
CS
LB, UB
tAS*6
tWC
Valid address
tAW
tCW*5
tBW
HM62W16258B Series
tWR*7
WE
Din
Dout
tWP*4
tDW tDH
Valid data
High impedance
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HM62W16258BLTT-5SL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HM62W16258BLTT-5SL | 4 M SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |