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PDF HMC174MS8 Data sheet ( Hoja de datos )
| Número de pieza | HMC174MS8 | |
| Descripción | GaAs MMIC T/R SWITCH DC - 3 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0101
MICROWAVE CORPORATION
HMC174MS8
GaAs MMIC T/R SWITCH
DC - 3 GHz
14
Typical Applications
The HMC174MS8 is ideal for:
• ISM Applications
• PCMCIA Wireless Cards
• Portable Wireless
Functional Diagram
Features
Ultra Small Package: MSOP8
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF power Capabilty
General Description
The HMC174MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in transmit-
receive applications which require very low dis-
tortion at high signal power levels. The device
can control signals from DC to 3.0 GHz and is
especially suited for 900 MHz, 1.8 - 2.2 GHz, and
2.4 GHz ISM applications with only 0.5 dB loss.
The design provides exceptional intermodulation
performance; providing a +60 dBm third order
intercept at 8 Volt bias. RF1 and RF2 are reflec-
tive shorts when “OFF”. On-chip circuitry allows
single positive supply operation at very low DC
current with control inputs compatible with CMOS
and most TTL logic families.
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min. Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.5
0.5
0.7
1.4
Isolation
DC - 1.0 GHz 22 25
DC - 2.0 GHz 20 24
DC - 2.5 GHz 17 21
DC - 3.0 GHz 13 17
Return Loss
DC - 1.0 GHz 20 28
DC - 2.0 GHz 16 21
DC - 2.5 GHz 13 17
DC - 3.0 GHz 9 11
Input Power for 1dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
35
34
39
38
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
55
55
60
60
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
Max.
0.7
0.8
1.0
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
14 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0101
MICROWAVE CORPORATION
Typical Application Circuit
HMC174MS8
GaAs MMIC T/R SWITCH
DC - 3 GHz
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
14 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC174MS8.PDF ] | |
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