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PDF HMC194MS8 Data sheet ( Hoja de datos )
| Número de pieza | HMC194MS8 | |
| Descripción | GaAs MMIC SPDT SWITCH DC - 3 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v04.0903
MICROWAVE CORPORATION
Typical Applications
The HMC194MS8 is ideal for:
• Cellular/PCS Base Stations
• Portable Wireless
• MMDS & WirelessLAN
Functional Diagram
14
HMC194MS8
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Features
Ultra Small Package: MSOP8
High Isolation: 50 dB
Positive Control: 0/+3V to 0/+7V
General Description
The HMC194MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in applica-
tions which require high isolation between two
RF paths. The device can control signals from
DC to 3 GHz and has been optimized to provide
extremely high isolation with minimal insertion
loss in medium and low power applications. On
chip circuitry allows positive voltage control oper-
ation at very low DC currents with control inputs
compatible with CMOS and most TTL logic fam-
ilies. RF1 and RF2 are reflective opens when
“OFF”.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Isolation
Parameter
RF1 / RF2
RF1 / RF2
Return Loss
Input Power for 1 dB Compression
0/+5V Control
Input Third Order Intercept
(Two-tone Input Power = +7 dBm Each Tone)
0/+5V Control
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON , tOFF (50% CTL to 10/90% RF)
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.5 - 1.0 GHz
0.5 - 3.0 GHz
0.5 - 1.0 GHz
0.5 - 3.0 GHz
DC - 3.0 GHz
Min.
45 / 47
39 / 43
31
24
18
14
13
13
19
17
39
37
Typ.
0.7
0.7
0.8
0.9
49 / 51
42 / 46
35
28
21
17
17
17
23
21
43
41
10
24
Max.
0.9
0.9
1.1
1.4
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
14 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v04.0903
MICROWAVE CORPORATION
Typical Application Circuit
HMC194MS8
GaAs MMIC SPDT SWITCH
DC - 3 GHz
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 7 Volts applied to the CMOS
logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with Control set to 0/+7V.
See “Design Techniques Enhance Isolation in Switch Assemblies”
for HMC194MS8 Applications, “Application Notes” Section.
14 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC194MS8.PDF ] | |
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