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PDF HMC232 Data sheet ( Hoja de datos )
| Número de pieza | HMC232 | |
| Descripción | GaAs MMIC SPDT NON-REFLECTIVE SWITCH/ DC - 15.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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MICROWAVE CORPORATION
v02.1203
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
7
7-2
Typical Applications
Broadband switch for DC - 15 GHz applications:
• Fiber Optics
• Microwave Radio
• Military & Space
• Test Equipment
• VSAT
Features
High Isolation: >50 dB @ 10 GHz
Low Insertion Loss: 1.4 dB @ 6 GHz
Non-Reflective Design
Die Size: 1.04 mm x 2.05 mm x 0.1 mm
Direct Replacement for HMC132
Functional Diagram
General Description
The HMC232 is a broadband non-reflective GaAs
MESFET SPDT MMIC chip. Covering DC to 15
GHz, the switch features over 55 dB isolation
at lower frequencies and over 45 dB at higher
frequencies due to the implementation of on-chip
via hole structures. The switch operates using two
negative control voltage logic lines (A&B) of -5/0V
and requires no Vee. Alternate A & B control pads
are provided to ease MIC implementation. All data
shown is tested with the chip in a 50 Ohm test fixture
connected via 0.025 mm (1 mil) diameter wire bonds
of 0.5 mm (20 mils) length. This product is a form, fit
& functional replacement for the HMC132.
Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min. Typ. Max.
Insertion Loss
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
1.4 1.7
2.2 2.5
3.1 3.4
Isolation
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
50 55
45 50
40 45
Return Loss
“On State”
DC - 6 GHz
DC - 15 GHz
18
12
Return Loss RF1, RF2
“Off State”
DC - 6 GHz
DC - 15 GHz
14
13
Input Power for 1 dB Compression
0.5 - 15 GHz
21 26
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 15 GHz
44 49
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 15 GHz
3
5
Units
dB
db
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v02.1203
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Assembly Diagram
7
Mounting & Bonding Techniques for Microwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.152 mm (6 mils).
7-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC232.PDF ] | |
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