PDF HMC266 Data sheet ( Hoja de datos )

Número de pieza	HMC266
Descripción	GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 20 - 40 GHz
Fabricantes	Hittite Microwave Corporation
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No Preview Available ! v01.0300 MICROWAVE CORPORATION HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Typical Applications The HMC266 is ideal for: • 23, 26, & 38 GHz Point to Point Radios • LMDS • SATCOM Functional Diagram 5 Features Input IP3: Up to +17 dBm Sub-Harmonically Pumped (x2) LO Small Size: 1.32mm x 1.47mm General Description The HMC266 chip is a broadband GaAs MMIC sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm2. The 2LO to RF isolation is excellent elimi- nating the need for additional ﬁltering. All data is with the chip in a 50 ohm test ﬁxture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). These devices are much smaller and more reliable than hybrid diode mixer designs. 5 - 64 Electrical Speciﬁcations, TA = +25° C, LO Drive = +12 dBm Parameter IF = 1 GHz Min. Typ. Frequency Range, RF 20 - 40 Frequency Range, LO 10 - 20 Frequency Range, IF 1-3 Conversion Loss 12 Noise Figure (SSB) 12 2LO to RF Isolation 42 52 LO to RF Isolation 20 24 2LO to IF Isolation 50 60 RF to IF Isolation 16 22 LO to IF Isolation 48 55 IP3 (Input) 10 13 1 dB Compression (Input) 0 +4 Max. 16 16 Units GHz GHz GHz dB dB dB dB dB dB dB dBm dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 page v01.0300 MICROWAVE CORPORATION HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz MMIC Assembly Techniques Ribbon Bond Ribbon Bond 5 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ﬁlm substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recom- mended to minimize inductance on the RF ports. 5 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 Page

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