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PDF HMC311ST89 Data sheet ( Hoja de datos )
| Número de pieza | HMC311ST89 | |
| Descripción | InGaP HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 6.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
8
8 - 74
Typical Applications
Features
The HMC311ST89 is an ideal RF/IF gain block
or LO buffer amplifier for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
P1dB Output Power: +15.5 dBm
Output IP3: +31.5 dBm
Gain: 16 dB
50 Ohm I/O’s
Industry Standard SOT89 Package
Functional Diagram
General Description
The HMC311ST89 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 6 GHz amplifier. Packaged in an industry
standard SOT89, the amplifier can be used as
either a cascadable 50 Ohm gain stage or to drive
the LO of HMC mixers with up to +16.5 dBm output
power. The HMC311ST89 offers 16 dB of gain
and an output IP3 of +31.5 dBm while requiring
only 54 mA from a +5V supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and yields excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 22 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
14.0
13.0
12.5
16.0
15.0
14.5
dB
dB
dB
Gain Variation Over Temperature
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.004
0.007
0.012
0.007
0.012
0.016
dB/ °C
dB/ °C
dB/ °C
Return Loss Input / Output
DC - 2.0 GHz
2.0 - 5.0 GHz
5.0 - 6.0 GHz
8
7
8
dB
dB
dB
Reverse Isolation
DC - 6.0 GHz
20
dB
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
13.5
12.0
10.0
15.5
15.0
13.0
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
31.5
30
27
24
dBm
dBm
dBm
dBm
Noise Figure
DC - 4.0 GHz
4.0 - 6.0 GHz
4.5
5
dB
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
54 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
8 Pin Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3 RFOUT
RF output and DC Bias for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
1900
18 nH
100 pF
Frequency (MHz)
2200
2400
18 nH
15 nH
100 pF
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
8 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC311ST89.PDF ] | |
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