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PDF HMC313 Data sheet ( Hoja de datos )
| Número de pieza | HMC313 | |
| Descripción | GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK/ DC - 6.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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MICROWAVE CORPORATION
v02.0703
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
8 Typical Applications
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN
Functional Diagram
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
General Description
The HMC313 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single Vcc supply. The surface
mount SOT26 amplifier can be used as a
broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313 offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current. The “HMC313 Biasing
and Impedance Matching Techniques” application
note available within the “Application Notes” section
offers recommendations for narrow band operation.
Electrical Specifications, TA = +25 °C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Vcc = +5V
Min. Typ. Max.
DC - 6
14 17
20
0.02
0.03
7
6
30
11 14
15
24 27
6.5
50
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
8 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v02.0703
HMC313
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
8 Pin Descriptions
Pin Number
Function
Description
This pin is DC coupled. An off chip DC blocking capacitor is
1 RFOUT
required.
Interface Schematic
This pin is DC coupled. An off chip DC blocking capacitor is
3 RFIN
required.
2, 4-6
GND
These pins must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
3. See “Application Notes” section for HMC313 Application Circuit.
8 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC313.PDF ] | |
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