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PDF HMC322 Data sheet ( Hoja de datos )
| Número de pieza | HMC322 | |
| Descripción | GaAs MMIC SP8T NON-REFLECTIVE SWITCH/ DC - 10.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC322 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MICROWAVE CORPORATION
v00.0303
HMC322
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Typical Applications
The HMC322 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
7
Features
Broadband Performance: DC - 10.0 GHz
High Isolation: >38 dB@ 4 GHz
Low Insertion Loss: 2.0 dB@ 4 GHz
Integrated 3:8 TTL Decoder
Small Size: 1.45 mm x 1.6 mm x 0.10 mm
General Description
The HMC322 is a broadband non-reflective
GaAs MESFET SP8T switch chip. Covering DC
to 10.0 GHz, this switch offers high isolation and
low insertion loss and extends the frequency
coverage of Hittite’s SP8T switch product line.
This switch also includes an on board binary
decoder circuit which reduces the required logic
control lines to three. The switch operates using
a negative control voltage of 0/-5V, and requires
a fixed bias of -5V. All data is tested with the chip
in a 50 Ohm test fixture connected via 0.025 mm
(1 mil) diameter wire bonds of 0.5 mm (20 mils)
length.
7 - 14
Electrical Specifications, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
1.9 2.3 dB
2.0 2.4 dB
2.1 2.5 dB
2.2 2.6 dB
2.4 2.8 dB
Isolation (RFC to RF1 - 8)
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
40 46
32 38
27 32
20 26
18 24
dB
dB
dB
dB
dB
Return Loss
“On State”
DC - 10.0 GHz
14 dB
Return Loss
“Off State”
DC - 10.0 GHz
11 dB
Input Power for 1 dB Compression
0.5 - 10.0 GHz
19 23
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 10.0 GHz
34 38
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 10.0 GHz
50 ns
150 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0303
HMC322
MICROWAVE CORPORATION
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
Pad Descriptions
Pad Number
Function
1 - 7,
12 - 14
RF1, RFC,
RF8 - RF2
Description
These pads are DC coupled and matched to 50 Ohms. Blocking
capacitors are required if RF line potential is not equal to 0V.
8A
See truth table and control voltage table.
Interface Schematic
7
9
10
11
Die Bottom
B
C
Vee
GND
See truth table and control voltage table.
See truth table and control voltage table.
Supply Voltage = -5Vdc ± 10%
Die bottom must be connected to RF / DC ground.
TTL Interface Circuit (Required for Each Control Input A, B and C)
Note:
Control inputs A, B, and C can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and
to the Vee pad of the RF Switch.
7 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC322.PDF ] | |
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