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PDF HMC329 Data sheet ( Hoja de datos )
| Número de pieza | HMC329 | |
| Descripción | GaAs MMIC DOUBLE-BALANCED MIXER/ 25 - 40 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0301
MICROWAVE CORPORATION
HMC329
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Typical Applications
The HMC329 is ideal for:
• LMDS
• Microwave Point-to-Point Radios
• SATCOM
Functional Diagram
5
Features
Passive: No DC Bias Required
Input IP3: +19 dBm
LO/RF Isolation: 42 dB
Small Size: 0.47 mm2
General Description
The HMC329 chip is a miniature passive double
balanced mixer which can be used as an upcon-
verter or downconverter from 25-40 GHz in a
small chip area of 0.84mm x 0.55mm. Excellent
isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm
microstrip test fixture that contains 5-mil alumina
substrates between the chip and K-connectors.
Measured data includes the parasitic effects of
the assembly. RF connections to the chip were
made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
5 - 82
Electrical Specifications, TA = +25° C
Parameter
LO = +13 dBm, IF = 1 GHz
Min. Typ. Max.
Frequency Range, RF & LO
25 - 40
Frequency Range, IF
DC - 8
Conversion Loss
9.5 11.5
Noise Figure (SSB)
9.5 11.5
LO to RF Isolation
38 42
LO to IF Isolation
25 35
RF to IF Isolation
21 28
IP3 (Input)
16 19
IP2 (Input)
45 55
1 dB Compression (Input)
8 11
* Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0301
MICROWAVE CORPORATION
HMC329
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
MIC Assembly Techniques
3 mil Ribbon Bond
3 mil Ribbon Bond
5
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-sub-
strate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended
to minimize inductance on RF, LO & IF ports.
5 - 86
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC329.PDF ] | |
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