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PDF HMC331 Data sheet ( Hoja de datos )

Número de pieza HMC331
Descripción GaAs MMIC PASSIVE FREQUENCY DOUBLER/ 12 - 18 GHz INPUT
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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No Preview Available ! HMC331 Hoja de datos, Descripción, Manual

MICROWAVE CORPORATION
v02.1201
HMC331
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Typical Applications
The HMC331 is suitable for:
• Wireless Local Loop
• LMDS, VSAT, and Pt to Pt Radios
• Test Equipment
Features
Conversion Loss: 14 dB
Fo, 3Fo, 4Fo Isolation: 50 dB
Passive: No Bias Required
4 Functional Diagram
General Description
The HMC331 is a passive miniature frequency dou-
bler MMIC. Suppression of undesired fundamental
and higher order harmonics is 50 dB typical with
respect to input signal level. The doubler utilizes
the same GaAs Schottky diode/balun technology
found in Hittite MMIC mixers. It features small size,
requires no DC bias, and adds no measurable addi-
tive phase noise onto the multiplied signal.
Electrical Specifications, TA = +25° C, As a Function of Drive Level
Input = +11 dBm
Input = +13 dBm
Input = +15 dBm
Parameter
Min.
Typ. Max. Min.
Typ.
Max.
Min.
Typ. Max.
Frequency Range, Input
13 - 18
12 - 18
12 - 18
Frequency Range, Output
26 - 36
24 - 36
24 - 36
Conversion Loss
15 20
14 20
14 19
FO Isolation
(with respect to input level)
45 50
45 50
45 50
3FO Isolation
(with respect to input level)
50 60
45 60
47 60
4FO Isolation
(with respect to input level)
50 60
50 60
50 60
Units
GHz
GHz
dB
dB
dB
dB
4 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

1 page




HMC331 pdf
v02.1201
MICROWAVE CORPORATION
HMC331
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid clean-
ing systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
4 bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool tempera-
ture of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40 - 60 grams. DC bonds of 0.001” (0.025mm) diameter, thermosonically bonded,
are recommended. Ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22
grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultra-
sonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less
than 12 mils (0.31 mm).
4 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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