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PDF HMC346 Data sheet ( Hoja de datos )
| Número de pieza | HMC346 | |
| Descripción | GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR/ DC - 20 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v01.0304
MICROWAVE CORPORATION
HMC346
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Typical Applications
This attenuator is ideal for use as a VVA
for DC - 20 GHz applications:
2 • Point-to-Point Radio
• VSAT Radio
Features
Wide Bandwidth: DC - 20 GHz
Low Phase Shift vs. Attenuation
32 dB Attenuation Range
Die Size: 0.85 mm x 0.85 mm x 0.1 mm
Functional Diagram
General Description
The HMC346 die is an absorptive Voltage Variable
Attenuator (VVA) operating from DC - 20 GHz. It
features an on-chip reference attenuator for use with
an external op-amp to provide simple single volt-
age attenuation control, 0 to -3V. The device is
ideal in designs where an analog DC control signal
must control RF signal levels over a 30 dB ampli-
tude range. For plastic packaged version, see the
HMC346MS8G which operates from DC - 8 GHz.
Electrical Specifications, TA = +25° C, 50 ohm system
Parameter
Min.
Typ.
Max.
Units
Insertion Loss
DC - 12GHz:
DC - 20 GHz:
1.7 2.3 dB
2.2 2.8 dB
Attenuation Range
DC - 12 GHz:
DC - 20 GHz:
27
22
32
25
dB
dB
Return Loss
DC - 12 GHz:
12 - 20 GHz:
6
10
10
15
dB
dB
Switching Characteristics
tRISE, tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
2
8
ns
ns
Input Power for 0.25 dB Compression (0.5 - 20 GHz)
Min. Atten:
Atten. >2 dB:
+8
+4
dBm
dBm
Input Third Order Intercept (0.5 - 20 GHz)
(Two-tone Input Power = -8 dBm Each Tone)
Min. Atten:
Atten. >2 dB:
+25
+10
dBm
dBm
2-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0304
MICROWAVE CORPORATION
Single-Line Control Driver
HMC346
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
2
External op-amp control circuit maintains
impedance match while attenuation is varied.
Input control ranges from 0 Volts (min.
attenuation) to -3.0 Volts (max. attenuation.)
Assembly Diagram
2-6
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing
RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-
substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC346.PDF ] | |
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