DataSheet26.com

HMC385LP4 PDF даташит

Спецификация HMC385LP4 изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «MMIC VCO w/ BUFFER AMPLIFIER/ 2.25 - 2.5 GHz».

Детали детали

Номер произв HMC385LP4
Описание MMIC VCO w/ BUFFER AMPLIFIER/ 2.25 - 2.5 GHz
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

6 Pages
scroll

No Preview Available !

HMC385LP4 Даташит, Описание, Даташиты
v01.0604
MICROWAVE CORPORATION
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Functional Diagram
15
HMC385LP4
MMIC VCO w/ BUFFER
AMPLIFIER, 2.25 - 2.5 GHz
Features
Pout: +4.5 dBm
Phase Noise: -115 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm2
General Description
The HMC385LP4 is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO with
integrated resonator, negative resistance device,
varactor diode, and buffer amplifier. Covering 2.25
to 2.5 GHz, the VCO’s phase noise performance
is excellent over temperature, shock, vibration
and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from
a single supply of 3V @ 35mA. The voltage con-
trolled oscillator is packaged in a low cost lead-
less QFN 4 x 4 mm surface mount package.
15 - 14
Electrical Specifications, TA = +25° C, Vcc = +3V
Parameter
Min.
Frequency Range
Power Output
1.5
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
0
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Typ.
2.25 - 2.5
4.5
-115
35
9
-7
-23
2.0
-2
0.25
Max.
10
10
Units
GHz
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com









No Preview Available !

HMC385LP4 Даташит, Описание, Даташиты
v01.0604
MICROWAVE CORPORATION
Frequency vs. Tuning Voltage, T= 25°C
2.6
2.5
2.4
2.3
2.2
Vcc=2.75V
Vcc=3.0V
2.1 Vcc=3.25V
2
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc= +3V
180
160
140 +25 C
+85 C
120 -40 C
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Phase Noise vs. Tuning Voltage
-80
-85
-90
-95
-100
-105
10 KHz Offset
100 KHz Offset
-110
-115
-120
0123456789
TUNING VOLTAGE (VOLTS)
10
HMC385LP4
MMIC VCO w/ BUFFER
AMPLIFIER, 2.25 - 2.5 GHz
Frequency vs. Tuning Voltage, Vcc= +3V
2.6
2.5
2.4
2.3
2.2
+25 C
+85 C
2.1 -40 C
2
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Output Power vs.
Tuning Voltage, Vcc= +3V
8
7
6
5
4
3
2 +25 C
+85 C
1 -40 C
0
0123456789
TUNING VOLTAGE (VOLTS)
10
15
Typical SSB Phase Noise @ Vtune= +5V
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
103
+25 C
+85 C
-40 C
104 105 106
OFFSET FREQUENCY (Hz)
107
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
15 - 15









No Preview Available !

HMC385LP4 Даташит, Описание, Даташиты
v01.0604
MICROWAVE CORPORATION
Absolute Maximum Ratings
Vcc
Vtune
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 6.28 mW/°C above 85°C)
Storage Temperature
Operating Temperature
+3.5 Vdc
0 to +11V
135 °C
565 W
-65 to +150 °C
-40 to +85 °C
HMC385LP4
MMIC VCO w/ BUFFER
AMPLIFIER, 2.25 - 2.5 GHz
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
2.75
28
3.0 35
3.25
41
Note: VCO will operate over full voltage range shown above.
Outline Drawing
15
15 - 16
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com










Скачать PDF:

[ HMC385LP4.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HMC385LP4MMIC VCO w/ BUFFER AMPLIFIER/ 2.25 - 2.5 GHzHittite Microwave Corporation
Hittite Microwave Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск