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PDF HMC395 Data sheet ( Hoja de datos )

Número de pieza HMC395
Descripción InGaP HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 4.0 GHz
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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v00.1002
MICROWAVE CORPORATION
HMC395
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
1
1 - 36
Typical Applications
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C3I
• Space Telecom
Functional Diagram
Features
Gain: 15 dB
P1dB Output Power: +16 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
Small Size: 0.38 mm x 0.58 mm x 0.1 mm
General Description
The HMC395 die is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC DC - 4
GHz amplifier. This amplifier die can be used as ei-
ther a cascadable 50 Ohm gain stage or to drive the
LO of HMC mixers with up to +17dBm output power.
The HMC395 offers 16 dB of gain and an output IP3
of +31dBm while requiring only 54mA from a +5V
supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components. The HMC395 can easily be integrated
into Multi-Chip-Modules (MCMs) due to its small
(0.22mm2) size. All data is with the chip in a 50 Ohm
test fixture connected via 0.025mm (1mil) diameter
wire bonds of minimal length 0.5mm (20mils).
Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, T = +25° C
A
Parameter
Min. Typ.
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
16
15
Gain Variation Over Temperature
DC - 1.0 GHz
1.0 - 4.0 GHz
0.004
0.008
Input Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
18
15
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
17
10
Reverse Isolation
DC - 4.0 GHz
19
Output Power for 1 dB Compression (P1dB)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
16
15
10
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
31
28
22
Noise Figure
DC - 4.0 GHz
4.5
Supply Current (Icq)
54
Note: Data taken with broadband bias tee on device output.
Max.
Units
dB
dB
dB/ °C
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

1 page




HMC395 pdf
v00.1002
MICROWAVE CORPORATION
HMC395
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
1 Pad Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
2
Die
Bottom
RFOUT
GND
RF output and DC Bias for the output stage.
Die bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Component
L1
C1, C2
50
270 nH
0.01 µF
100
270 nH
0.01 µF
Frequency (MHz)
500
100 nH
500 pF
1000
56 nH
100 pF
4000
8.2 nH
100 pF
1 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com

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