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PDF HMC396 Data sheet ( Hoja de datos )
| Número de pieza | HMC396 | |
| Descripción | InGaP HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 8.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC396 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8.0 GHz
1
1 - 42
Typical Applications
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C3I
• Space Telecom
Functional Diagram
Features
Gain: 12 dB
P1dB Output Power: +14 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
Small Size: 0.38 mm x 0.58 mm x 0.1 mm
General Description
The HMC396 die is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC DC to 8
GHz amplifier. This amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
of HMC mixers with up to +16 dBm output power.
The HMC396 offers 12 dB of gain and an output IP3
of +30 dBm while requiring only 56 mA from a +5V
supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components. The HMC396 can easily be integrated
into Multi-Chip-Modules (MCMs) due to its small
(0.22mm2) size. All data is with the chip in a 50 Ohm
test fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.5mm (20 mils).
Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
DC - 4.0 GHz
4.0 - 8.0 GHz
12
11
Gain Variation Over Temperature
DC - 4.0 GHz
4.0 - 8.0 GHz
0.004
0.015
Input Return Loss
DC - 4.0 GHz
4.0 - 8.0 GHz
15
12
Output Return Loss
DC - 4.0 GHz
4.0 - 8.0 GHz
19
17
Reverse Isolation
DC - 8.0 GHz
16
Output Power for 1 dB Compression (P1dB)
DC - 4.0 GHz
4.0 - 8.0 GHz
14
13
Output Third Order Intercept (IP3)
DC - 4.0 GHz
4.0 - 8.0 GHz
30
24
Noise Figure
DC - 8.0 GHz
6
Supply Current (Icq)
56
Note: Data taken with broadband bias tee on device output.
Max.
Units
dB
dB
dB/ °C
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8.0 GHz
1 Pad Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
2
Die
Bottom
RFOUT
GND
RF output and DC Bias for the output stage.
Die bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Component
L1
C1, C2
50
270 nH
0.01 µF
Frequency (MHz)
1000
4000
56 nH
8.2 nH
100 pF
100 pF
8000
2.2 nH
100 pF
1 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC396.PDF ] | |
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