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HMC406MS8G PDF даташит

Спецификация HMC406MS8G изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «GaAs InGaP HBT MMIC POWER AMPLIFIER».

Детали детали

Номер произв HMC406MS8G
Описание GaAs InGaP HBT MMIC POWER AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC406MS8G Даташит, Описание, Даташиты
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
Min.
13
21
34
Typ.
5-6
16
0.03
10
8
24
27
38
6.0
0.002 / 300
7
35
Max.
21
0.04
Min. Typ. Max. Units
5.7 - 5.9
GHz
14 17 21 dB
0.03
0.04 dB/ °C
11 dB
9 dB
24 27
dBm
29 dBm
34 38
dBm
6.0 dB
0.002 / 300
mA
7 mA
35 ns
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HMC406MS8G Даташит, Описание, Даташиты
HMC406* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC406MS8G Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Data Sheet
HMC406 Data Sheet
TOOLS AND SIMULATIONS
HMC406 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC406 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC406 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
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HMC406MS8G Даташит, Описание, Даташиты
v06.0611
HMC406MS8G / 406MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Broadband Gain & Return Loss
20
15
10
5
0
-5
-10
-15
-20
-25
3
4567
FREQUENCY (GHz)
S21
S11
S22
8
Gain vs. Temperature
22
20
18
16
14
12
10
8
6
4
2
0
4.5
+25 C
+85 C
-40 C
5 5.5
FREQUENCY (GHz)
6
6.5
Input Return Loss vs. Temperature
0
-5
-10
-15
+25 C
-20 +85 C
-40 C
-25
-30
4.5
5 5.5 6
FREQUENCY (GHz)
6.5
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
-5
-10
-15
4.5
5 5.5 6
FREQUENCY (GHz)
6.5
P1dB vs. Temperature
34
30
26
22
18
14
4.5
+25 C
+85 C
-40 C
5 5.5 6
FREQUENCY (GHz)
6.5
Psat vs. Temperature
34
30
26
22
+25 C
+85 C
-40 C
18
14
4.5
5 5.5 6
FREQUENCY (GHz)
6.5
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2










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Номер в каталогеОписаниеПроизводители
HMC406MS8GGaAs InGaP HBT MMIC POWER AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC406MS8GEGaAs InGaP HBT MMIC POWER AMPLIFIERAnalog Devices
Analog Devices

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