(PDF) 2SK1947 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1947
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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1. - 250V, 50A, N-Channel MOSFET Hay una vista previa y un enlace de descarga de 2SK1947 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas
No Preview Available ! 2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • Built-In Fast Recovery Diode (trr = 140 ns) • Suitable for Switching regulator, Motor Control Outline TO-3PL D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 4 3 50 A 2 1 20 A ID = 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) 2SK1947 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 10 V 0.02 0.01 0.005 2 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.20 0.16 Pulse Test VGS = 10 V 0.12 0.08 0.04 ID = 50 A 10 A, 20 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 Pulse Test 50 VDS = 10 V Tc = 25°C 20 –25°C 10 75°C 5 2 1 0.5 1 2 5 10 20 Drain Current ID (A) 50 5 5 Page

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PDF 2SK1947 Data sheet ( Hoja de datos )