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2SK3070S PDF даташит

Спецификация 2SK3070S изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв 2SK3070S
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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2SK3070S Даташит, Описание, Даташиты
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 4.5 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
ADE-208-684G (Z)
8th. Edition
February 1999
LDPAK
D
G
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain









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2SK3070S Даташит, Описание, Даташиты
Datasheet Title
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2









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2SK3070S Даташит, Описание, Даташиты
Datasheet Title
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
40
1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
50
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 1. Pulse test
Typ
4.5
6.5
80
6800
1300
380
130
25
30
60
300
550
400
1.05
90
Max
±0.1
10
2.5
5.8
10
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA, VDS = 10 V Note1
ID = 40 A, VGS = 10 V Note1
ID = 40 A, VGS = 4 V Note1
ID = 40 A, VDS = 10 V Note1
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 75 A
VGS = 10 V, ID = 40 A
RL = 0.75
IF = 75 A, VGS = 0
IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
3










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Номер в каталогеОписаниеПроизводители
2SK3070Silicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3070LSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3070SSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor

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