DataSheet26.com

2SK3072 PDF даташит

Спецификация 2SK3072 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «Ultrahigh-Speed Switching Applications».

Детали детали

Номер произв 2SK3072
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

4 Pages
scroll

No Preview Available !

2SK3072 Даташит, Описание, Даташиты
Ordering number : ENN7224
2SK3072
N-Channel Silicon MOSFET
2SK3072
Ultrahigh-Speed Switching Applications
Features
Ultrahigh-speed switching.
Low-voltage drive.
Package Dimensions
unit : mm
2091A
[2SK3072]
0.4
3
0.16
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : HK
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=300µA, VGS=0
VDS=360V, VGS=0
VGS=±10V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=15mA
ID=15mA, VGS=10V
ID=15mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
1 0.95 0.95 2
1.9
2.9
1 : Gate
2 : Source
3 : Drain
SANYO : CP
Ratings
450
±10
30
120
250
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
450
1.0
14
Ratings
typ
max
Unit
V
10 µA
±10 µA
2.0 V
28 mS
210 275
230 300
20 pF
5 pF
3 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80902 TS IM TA-1670 No.7224-1/4









No Preview Available !

2SK3072 Даташит, Описание, Даташиты
2SK3072
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
Symbol
td(on)
tr
td(off)
tf
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=30mA, VGS=0
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=200V
ID=15mA
RL=13.3k
D VOUT
2SK3072
P.G 50S
Ratings
min typ max
Unit
25 ns
100 ns
110 ns
1.2 µs
1.2 V
ID -- VDS
80
10V
70
5V
60 4V
50
40
30
3V
20
10
VGS=2V
0
0 10 20 30 40 50
Drain-to-Source Voltage, VDS -- V IT04342
RDS(on) -- VGS
700
Ta=25°C
600
500
400
15mA
300
1mA
200
ID=30mA
100
0
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V IT04344
ID -- VGS
60
VDS=10V
Ta= --25°C
50
25°C
40
75°C
30
20
10
0
0
500
450
400
350
300
250
200
150
100
50
0
--50
5 10
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
15
IT04343
I DI=D1=51m5Am,AV, GVSG=S4=V10V
--25 0
25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT04345
No.7224-2/4









No Preview Available !

2SK3072 Даташит, Описание, Даташиты
3.0
2.5
2.0
1.5
1.0
0.5
0
--50
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.2
100
7
5
3
2
10
7
5
3
2
1.0
0
300
VGS(off) -- Ta
2SK3072
VDS=10V
ID=1mA
100
7
5
3
2
10
7
5
3
2
yfs-- ID
VDS=10V
Ta=
--25°C
75°C
25°C
0 50 100
Ambient Temperature, Ta -- °C
IF -- VSD
150
IT04346
VGS=0
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT04348
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT04350
PD -- Ta
1.0
1.0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
23
5 7 10
23
57
Drain Current, ID -- mA
SW Time -- ID
IT04347
VDD=200V
VGS=10V
tf
td (off)
tr
td(on)
10
23
5 7 10
23
57
Drain Current, ID -- mA
IT04349
Forward Bias A S O
3
2 IDP=120mA
<10µs
100
7
5 ID=30mA
3
10m1ms 1s00µs
2
10
7
5
3 Operation in this area
2 is limited by RDS(on).
DC operation
1.0
7
5
3
2 Ta=25°C
0.1 Single pulse
1.0 2 3 5 7 10
2 3 5 7 100
2 3 57
Drain-to-Source Voltage, VDS -- V IT04351
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04352
No.7224-3/4










Скачать PDF:

[ 2SK3072.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2SK3070Silicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3070LSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3070SSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3072Ultrahigh-Speed Switching ApplicationsSanyo Semicon Device
Sanyo Semicon Device

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск