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PDF 2SK3079A Data sheet ( Hoja de datos )
| Número de pieza | 2SK3079A | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
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2SK3079A
Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm
· Output power: Po = 33.50dBmW (2.2 W) (min)
· Gain: Gp = 13.50dB (min)
· Drain Efficiency: ηD = 50.0% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note 1: Tc = 25°C
Symbol
VDSS
VGSS
ID
PD (Note 1)
Tch
Tstg
Rating
10
3
3
20.0
150
−45~150
Marking
Type Name
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-5N1A
UD F
**
Dot
Lot No.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 2)
PO
ηD
Gp
Vth
IDSS
IGSS
¾
VDS = 4.5 V, Iidle = 50 mA
(VGS = adjust)
f = 470 MHz, Pi = 20dBmW
ZG = ZL = 50 Ω
VDS = 4.5 V, ID = 0.5 mA
VDS = 10 V, VGS = 0 V
VGS = 5 V, VDS = 0 V
VDS = 5 V, f = 470 MHz,
Pi = 20dBmW,
Po = 33.5dBmW (VGS = adjust)
VSWR LOAD 10:1 all phase
33.5
50.0
13.5
¾
¾
¾
¾
¾
¾
0.8
¾
¾
¾ dBmW
¾%
¾ dB
¾V
10 µA
5 µA
No degradation
¾
Caution: This is transistor the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
1 2002-01-09
1 page  
2SK3079A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2002-01-09
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