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M27V801-120K1TR PDF даташит

Спецификация M27V801-120K1TR изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM».

Детали детали

Номер произв M27V801-120K1TR
Описание 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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M27V801-120K1TR Даташит, Описание, Даташиты
M27V801
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM
s LOW VOLTAGE READ OPERATION:
3V to 3.6V
s FAST ACCESS TIME: 120ns
s LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/byte (typical)
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 42h
DESCRIPTION
The M27V801 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 1,048,576 by
8 bits.
The M27V801 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP32W (window ceramic frit-seal package)
has transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
Table 1. Signal Names
A0-A19
Address Inputs
Q0-Q7
Data Outputs
E Chip Enable
GVPP
Output Enable / Program Supply
VCC Supply Voltage
VSS Ground
32
1
FDIP32W (F)
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
20
A0-A19
8
Q0-Q7
E
GVPP
M27V801
VSS
AI01902
May 1998
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M27V801-120K1TR Даташит, Описание, Даташиты
M27V801
Figure 2A. DIP Pin Connections
A19
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
M27V801
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
A18
A17
A14
A13
A8
A9
A11
GVPP
A10
E
Q7
Q6
Q5
Q4
Q3
AI01903
Figure 2B. PLCC Pin Connections
A7
A6
A5
A4
A3 9
A2
A1
A0
Q0
1 32
M27V801
17
A14
A13
A8
A9
25 A11
GVPP
A10
E
Q7
AI01904
Figure 2C. TSOP Pin Connections
A11
A9
A8
A13
A14
A17
A18
VCC
A19
A16
A15
A12
A7
A6
A5
A4
1 32 GVPP
A10
E
Q7
Q6
Q5
Q4
8 M27V801 25 Q3
9 (Normal) 24 VSS
Q2
Q1
Q0
A0
A1
A2
16 17 A3
AI01905
For applications where the content is programmed
only one time and erasure is not required, the
M27V801 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
DEVICE OPERATION
The operating modes of the M27V801 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for GVPP and 12V on A9 for Elec-
tronic Signature and Margin Mode Set or Reset .
Read Mode
The M27V801 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(tAVQV) is equal to the delay from E to output
(tELQV). Data is available at the output after a delay
of tGLQV from the falling edge of G, assuming that
E has been low and the addresses have been sta-
ble for at least tAVQV-tGLQV.
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M27V801-120K1TR Даташит, Описание, Даташиты
M27V801
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
VCC Supply Voltage
–2 to 7
V
VA9 (2)
A9 Voltage
–2 to 13.5
V
VPP Program Supply Voltage
–2 to 14
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V.
E
VIL
VIL
VIL Pulse
VIH
VIH
VIL
GVPP
VIL
VIH
VPP
VPP
X
VIL
A9 Q0-Q7
X Data Out
X Hi-Z
X Data In
X Hi-Z
X Hi-Z
VID Codes
Table 4. Electronic Signature
Ide ntifie r
A0 Q7 Q6 Q5
Manufacturer’s Code
VIL
0
0
1
Device Code
VIH 0 1 0
Standby Mode
The M27V801 has a standby mode which reduces
the active current from 15mA to 20µA with low volt-
age operation VCC 3.6V, see Read Mode DC
Characteristics table for details.The M27V801 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the GVPP input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection.
Q4 Q3 Q2 Q1 Q0 Hex Data
00000
20h
00010
42h
The two line control function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
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