74ACT20M PDF даташит
Спецификация 74ACT20M изготовлена «STMicroelectronics» и имеет функцию, называемую «DUAL 4-INPUT NAND GATE». |
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Детали детали
Номер произв | 74ACT20M |
Описание | DUAL 4-INPUT NAND GATE |
Производители | STMicroelectronics |
логотип |
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74ACT20
DUAL 4-INPUT NAND GATE
s HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 4µA(MAX.) at TA=25°C
s COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.), VIL = 0.8V (MAX.)
s 50Ω TRANSMISSION LINE DRIVING
CAPABILITY
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 24mA (MIN)
s BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
s OPERATING VOLTAGE RANGE:
VCC (OPR) = 4.5V to 5.5V
s PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 20
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT20 is an advanced high-speed CMOS
DUAL 4-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C2MOS tecnology.
The internal circuit is composed of 3 stages in-
cluding buffer output, which enables high noise
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
74ACT20B
74ACT20M
T&R
74ACT20MTR
74ACT20TTR
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with protec-
tion circuits against static discharge, giving them
2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2001
1/8
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74ACT20
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 9
2, 10
3, 11
5, 13
6, 8
7
14
SYMBOL
1A to 2A
1B to 2B
1C to 2C
1C to 2D
1Y to 2Y
GND
VCC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
ABCDY
L XXXH
X LXXH
X X L XH
XXXLH
HHHH L
X : Don’t Care
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter²
Value
Unit
VCC Supply Voltage
-0.5 to +7
V
VI DC Input Voltage
-0.5 to VCC + 0.5
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20
mA
IOK DC Output Diode Current
± 20
mA
IO DC Output Current
± 50
mA
ICC or IGND DC VCC or Ground Current
± 100
mA
Tstg Storage Temperature
-65 to +150
°C
TL Lead Temperature (10 sec)
300 °C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC Supply Voltage
VI Input Voltage
VO Output Voltage
Top Operating Temperqture
dt/dv Input Rise and Fall Time VCC = 4.5 to 5.5V (note 1)
1) VIN from 0.8V to 2.0V
Value
4.5 to 5.5
0 to VCC
0 to VCC
-55 to 125
8
Unit
V
V
V
°C
ns/V
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74ACT20
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
Min. Typ. Max.
VIH High Level Input 4.5 VO = 0.1 V or 2.0 1.5
Voltage
5.5 VCC-0.1V 2.0 1.5
VIL Low Level Input
Voltage
4.5 VO = 0.1 V or
5.5 VCC-0.1V
1.5 0.8
1.5 0.8
VOH High Level Output 4.5
Voltage
5.5
IO=-50 µA
IO=-50 µA
4.4 4.49
5.4 5.49
4.5
IO=-24 mA
3.86
5.5
IO=-24 mA
4.86
VOL Low Level Output
Voltage
4.5
5.5
IO=50 µA
IO=50 µA
0.001 0.1
0.001 0.1
4.5 IO=24 mA
0.36
5.5 IO=24 mA
0.36
II
Input Leakage Cur-
rent
5.5
VI = VCC or GND
± 0.1
ICCT Max ICC/Input
5.5 VI = VCC - 2.1V
0.6
ICC
Quiescent Supply
Current
5.5 VI = VCC or GND
4
IOLD
IOHD
Dynamic Output
Current (note 1, 2)
5.5 VOLD = 1.65 V max
VOHD = 3.85 V min
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω
-40 to 85°C -55 to 125°C
Min. Max. Min. Max.
2.0 2.0
2.0 2.0
0.8 0.8
0.8 0.8
4.4 4.4
5.4 5.4
3.76
3.7
4.76
4.7
0.1 0.1
0.1 0.1
0.44
0.5
0.44
0.5
±1 ±1
1.5 1.6
40 80
75 50
-75 -50
Unit
V
V
V
µA
mA
µA
mA
mA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC
(V)
tPLH tPHL Propagation Delay
Time
5.0(*)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
1.5 5.0 7.2 1.0 9.5 1.0 9.5 ns
(*) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
3.8
pF
CPD Power Dissipation
Capacitance (note 5.0
1)
fIN = 10MHz
33
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 (per gate)
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