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74ABT623DB PDF даташит

Спецификация 74ABT623DB изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Octal transceiver with dual enable/ non-inverting; 3-State».

Детали детали

Номер произв 74ABT623DB
Описание Octal transceiver with dual enable/ non-inverting; 3-State
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74ABT623DB Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
74ABT623
Octal transceiver with dual enable,
non-inverting; (3-State)
Product specification
Supersedes data of 1996 Sep 25
IC23 Data Handbook
1998 Jan 16
Philips
Semiconductors









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74ABT623DB Даташит, Описание, Даташиты
Philips Semiconductors
Octal transceiver with dual enable, non-inverting
(3-State)
Product specification
74ABT623
FEATURES
Octal bidirectional bus interface
3-State buffers
Power-up 3-State
Output capability: +64mA/–32mA
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT623 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT623 device is an octal transceiver featuring non–inverting
3-State bus compatible outputs in both send and receive directions.
The 74ABT623 is designed for asynchronous two-way
communication between data buses. The control function
implementation allows for maximum flexibility in timing. This device
allows data transmission from the A bus to the B bus or from the B
bus to the A bus, depending upon the logic levels at the Enable
inputs (OEBA and OEAB). The Enable inputs can be used to disable
the device so that the buses are effectively isolated.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
tPLH
tPHL
CIN
CI/O
ICCZ
Propagation delay
An to Bn or Bn to An
Input capacitance
OEAB, OEBA
I/O capacitance
Total supply current
CONDITIONS
Tamb = 25°C; GND = 0V
CL = 50pF; VCC = 5V
VI = 0V or VCC
Outputs disabled; VO = 0V or VCC
Outputs disabled; VCC =5.5V
TYPICAL
2.6
2.7
4
7
50
UNIT
ns
pF
pF
µA
ORDERING INFORMATION
PACKAGES
20-Pin Plastic DIP
20-Pin plastic SO
20-Pin Plastic SSOP Type II
20-Pin Plastic TSSOP Type I
TEMPERATURE RANGE OUTSIDE NORTH AMERICA
–40°C to +85°C
74ABT623 N
–40°C to +85°C
74ABT623 D
–40°C to +85°C
74ABT623 DB
–40°C to +85°C
74ABT623 PW
NORTH AMERICA
74ABT623 N
74ABT623 D
74ABT623 DB
74ABT623PW DH
DWG NUMBER
SOT146-1
SOT163-1
SOT339-1
SOT360-1
PIN CONFIGURATION
OEAB 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
20 VCC
19 OEBA
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
PIN DESCRIPTION
PIN NUMBER SYMBOL
NAME AND FUNCTION
1
OEAB
Output enable input, A side to B
side (active-High)
2, 3, 4, 5,
6, 7, 8, 9
A0 – A7 Data inputs/outputs (A side)
18, 17, 16, 15,
14, 13, 12, 11
B0 – B7
Data inputs/outputs (B side)
19
OEBA
Output enable input, B side to A
side (active-Low)
10 GND Ground (0V)
20 VCC Positive supply voltage
SA00189
1998 Jan 16
2 853–1459 18866









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74ABT623DB Даташит, Описание, Даташиты
Philips Semiconductors
Octal transceiver with dual enable, non-inverting
(3-State)
Product specification
74ABT623
LOGIC SYMBOL
1
OEAB
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
19
OEBA
18
B0
17
B1
16
B2
15
B3
14
B4
13
B5
12
B6
11
B7
SA00195
LOGIC SYMBOL (IEEE/IEC)
1 EN1
19 EN1
21
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
SA00196
FUNCTION TABLE
INPUTS
INPUTS/OUTPUTS
OEBA OEAB
An
Bn
LL
An = Bn
Inputs
HH
Inputs
Bn = An
HL
Z
Z
LH
An = Bn
Bn = An
H = High voltage level
L = Low voltage level
Z = High impedance “off” state
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC DC supply voltage
–0.5 to +7.0
V
IIK DC input diode current
VI < 0
–18 mA
VI DC input voltage3
–1.2 to +7.0
V
IOK
VOUT
DC output diode current
DC output voltage3
VO < 0
output in Off or High state
–50
–0.5 to +5.5
mA
V
IOUT
DC output current
output in Low state
128 mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
3










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