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74ABT861D PDF даташит

Спецификация 74ABT861D изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «10-bit bus transceiver 3-State».

Детали детали

Номер произв 74ABT861D
Описание 10-bit bus transceiver 3-State
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74ABT861D Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
74ABT861
10-bit bus transceiver (3-State)
Product specification
Supersedes data of 1995 Sep 06
IC23 Data Handbook
1998 Jan 16
Philips
Semiconductors









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74ABT861D Даташит, Описание, Даташиты
Philips Semiconductors
10-bit bus transceiver (3-State)
Product specification
74ABT861
FEATURES
Provides high performance bus interface buffering for wide
data/address paths or buses carrying parity
Buffered control inputs for light loading, or increased fan-in as
required with MOS microprocessors
Output capability: +64mA/–32mA
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Power-up 3-State
Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT861 bus transceiver provides high performance bus
interface buffering for wide data/address paths of buses carrying
parity.
The 74ABT861 10-bit bus transceiver has NOR-ed transmit and
receive output enables for maximum control flexibility.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
tPLH
tPHL
CIN
CI/O
ICCZ
Propagation delay
An to Bn or Bn to An
Input capacitance
I/O capacitance
Total supply current
CONDITIONS
Tamb = 25°C; GND = 0V
CL = 50pF; VCC = 5V
VI = 0V or VCC
Outputs disabled; VO = 0V or VCC
Outputs disabled; VCC =5.5V
TYPICAL
3.4
4
7
500
UNIT
ns
pF
pF
nA
ORDERING INFORMATION
PACKAGES
24-Pin Plastic DIP
24-Pin plastic SO
24-Pin Plastic SSOP Type II
24-Pin Plastic TSSOP Type I
TEMPERATURE RANGE OUTSIDE NORTH AMERICA
–40°C to +85°C
74ABT861 N
–40°C to +85°C
74ABT861 D
–40°C to +85°C
74ABT861 DB
–40°C to +85°C
74ABT861 PW
NORTH AMERICA
74ABT861 N
74ABT861 D
74ABT861 DB
74ABT861PW DH
DWG NUMBER
SOT222-1
SOT137-1
SOT340-1
SOT355-1
PIN CONFIGURATION
OEBA 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
TOP VIEW
A6 8
A7 9
A8 10
A9 11
GND 12
24 VCC
23 B0
22 B1
21 B2
20 B3
19 B4
18 B5
17 B6
16 B7
15 B8
14 B9
13 OEAB
SA00278
PIN DESCRIPTION
PIN NUMBER SYMBOL
FUNCTION
13
OEAB
A side to B side output enable
input (active-Low)
2, 3, 4, 5, 6,
7, 8, 9, 10, 11
23, 22, 21, 20, 19,
18, 17, 16, 15, 14
1
12
A0-A9
B0-B9
OEBA
GND
Data inputs/outputs (A side)
Data inputs/outputs (B side)
B side to A side output enable
input (active-Low)
Ground (0V)
24 VCC Positive supply voltage
1998 Jan 16
2 853-1621 18866









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74ABT861D Даташит, Описание, Даташиты
Philips Semiconductors
10-bit bus transceiver (3-State)
Product specification
74ABT861
LOGIC SYMBOL
2 3 4 5 6 7 8 9 10 11
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
1 OEBA
13 OEAB
B0 B1 B2 B3 B4 B5 B6 B7 B8 B9
23 22 21 20 19 18 17 16 15 14
SA00279
LOGIC DIAGRAM
OEAB
10
An
OEBA
10
Bn
SA00281
LOGIC SYMBOL (IEEE/IEC)
1
EN1(BA)
13
EN2(AB)
21
2
3
4
5
6
7
8
9
10
11
23
22
21
20
19
18
17
16
15
14
SA00280
FUNCTION TABLE
INPUTS
OPERATING
OEAB
OEBA
MODE
L H A data to B bus
H L B data to A bus
H HZ
H = High voltage level
L = Low voltage level
X = Don’t care
Z = High impedance “off” state
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC DC supply voltage
–0.5 to +7.0
V
IIK DC input diode current
VI DC input voltage3
VI < 0
–18
–1.2 to +7.0
mA
V
IOK DC output diode current
VO < 0
–50 mA
VOUT
DC output voltage3
output in Off or High state
–0.5 to +5.5
V
IOUT
DC output current
output in Low state
128 mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
3










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