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61LV5128 PDF даташит

Спецификация 61LV5128 изготовлена ​​​​«Integrated Silicon Solution Inc» и имеет функцию, называемую «512K x 8 HIGH-SPEED CMOS STATIC RAM».

Детали детали

Номер произв 61LV5128
Описание 512K x 8 HIGH-SPEED CMOS STATIC RAM
Производители Integrated Silicon Solution Inc
логотип Integrated Silicon Solution  Inc логотип 

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61LV5128 Даташит, Описание, Даташиты
IS61LV5128
ISSI®
512K x 8 HIGH-SPEED CMOS STATIC RAM
JULY 2001
FEATURES
• High-speed access times:
10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV5128 is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The IS61LV5128
is fabricated using ISSI's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV5128 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-
pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
VCC
GND
I/O0-I/O7
DECODER
512K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
1









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61LV5128 Даташит, Описание, Даташиты
IS61LV5128
PIN CONFIGURATION
36 mini BGA
1 23 45 6
A A0 A1 NC A3 A6 A8
B I/O4 A2 WE A4 A7 I/O0
C I/O5
NC A5
I/O1
D GND
Vcc
E Vcc
GND
F I/O6
A18 A17
I/O2
G I/O7 OE CE A16 A15 I/O3
H A9 A10 A11 A12 A13 A14
44-Pin TSOP (Type II)
NC 1
NC 2
A0 3
A1 4
A2 5
A3 6
A4 7
CE 8
I/O0 9
I/O1 10
Vcc 11
GND 12
I/O2 13
I/O3 14
WE 15
A5 16
A6 17
A7 18
A8 19
A9 20
NC 21
NC 22
ISSI ®
44 NC
43 NC
42 NC
41 A18
40 A17
39 A16
38 A15
37 OE
36 I/O7
35 I/O6
34 GND
33 Vcc
32 I/O5
31 I/O4
30 A14
29 A13
28 A12
27 A11
26 A10
25 NC
24 NC
23 NC
PIN DESCRIPTIONS
A0-A18
CE
OE
WE
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
I/O0-I/O7 Bidirectional Ports
Vcc Power
GND
Ground
NC No Connection
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down)
Output Disabled H
Read
H
Write
L
CE OE I/O Operation Vcc Current
HX
High-Z
ISB1, ISB2
LH
LL
LX
High-Z
DOUT
DIN
ICC
ICC
ICC
36-Pin SOJ
A0
A1
A2
A3
A4
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE
30 I/O7
29 I/O6
28 GND
27 Vcc
26 I/O5
25 I/O4
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
2 Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. B
07/16/01









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61LV5128 Даташит, Описание, Даташиты
IS61LV5128
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND 0.5 to Vcc + 0.5 V
TBIAS
Temperature Under Bias
55 to +125
°C
TSTG
Storage Temperature
65 to +150
°C
PT Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
ISSI ®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
40°C to +85°C
10 ns
VCC
3.3V +10%, -5%
3.3V +10%, -5%
12 ns, 15 ns
VCC
3.3V ± 10%
3.3V ± 10%
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
CIN Input Capacitance
VIN = 0V
6
CI/O
Input/Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. B
07/16/01
3










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Номер в каталогеОписаниеПроизводители
61LV51216 IS61LV51216Integrated Silicon Solution
Integrated Silicon Solution
61LV5128512K x 8 HIGH-SPEED CMOS STATIC RAMIntegrated Silicon Solution  Inc
Integrated Silicon Solution Inc

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