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62LV12816 PDF даташит

Спецификация 62LV12816 изготовлена ​​​​«Integrated Silicon Solution Inc» и имеет функцию, называемую «128K x 16 CMOS STATIC RAM».

Детали детали

Номер произв 62LV12816
Описание 128K x 16 CMOS STATIC RAM
Производители Integrated Silicon Solution Inc
логотип Integrated Silicon Solution  Inc логотип 

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62LV12816 Даташит, Описание, Даташиты
IS62LV12816L
IS62LV12816L
128K x 16 CMOS STATIC RAM
ISSISSII®®
ADVANCE INFORMATION
AUGUST 1998
FEATURES
• High-speed access time: 70, 100, and 120 ns
• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 3V ± 10% VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA
FUNCTIONAL BLOCK DIAGRAM
1
DESCRIPTION
2The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
3
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
4with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
5A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA.
6
7
A0-A16
DECODER
128K x 16
MEMORY ARRAY
8
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
COLUMN I/O
9
10
11
12
The specification contains ADVANCE INFORMATION. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1998, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98
1









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62LV12816 Даташит, Описание, Даташиты
IS62LV12816L
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
ISSI ®
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 Vcc
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
48-Pin mini BGA
1 23 45 6
A LB OE A0 A1 A2 N/C
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5
A6 I/O1 I/O2
D GND I/O11 NC A7 I/O3 Vcc
E
Vcc I/O12 NC
A16 I/O4 GND
F I/O14 I/O13 A14 A15 I/O5 I/O6
G
I/O15 NC
A12 A13 WE
I/O7
H
NC A8
A9 A10 A11 NC
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CE
OE
WE
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
LB
UB
NC
Vcc
GND
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
TRUTH TABLE
Mode
WE CE OE LB UB
Not Selected
XHXXX
Output Disabled
H
L
H
X
X
X L XHH
Read
HL L LH
HL LHL
HL L L L
Write
L LXLH
L LXHL
LLXLL
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
Vcc Current
ISB1, ISB2
ICC
ICC
ICC
2 Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98









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62LV12816 Даташит, Описание, Даташиты
IS62LV12816L
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.0V ± 10%
3.0V ± 10%
ISSI ®
1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc+0.5
V
TBIAS
Temperature Under Bias
–40 to +85
°C
VCC Vcc Related to GND
–0.3 to +4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT Power Dissipation
1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VCC = Min., IOH = –1 mA
VOL Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH Input HIGH Voltage
VIL(1)
Input LOW Voltage
ILI Input Leakage
GND VIN VCC
ILO Output Leakage
GND VOUT VCC, Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Min.
2.0
2.2
–0.2
–1
–1
Max.
0.4
VCC + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70 -100 -120
Symbol Parameter
Test Conditions
Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max.,
Com.
— 40
— 30
— 20 mA
Supply Current
IOUT = 0 mA, f = fMAX Ind.
— 60
— 50
— 40
ISB1 TTL Standby Current VCC = Max.,
(TTL Inputs)
VIN = VIH or VIL
CE VIH , f = 0
Com.
Ind.
— 0.4
— 1.0
— 0.4
— 1.0
— 0.4
— 1.0
mA
ISB2 CMOS Standby
VCC = Max.,
Current (CMOS Inputs) CE VCC – 0.2V,
Com.
Ind.
VIN VCC – 0.2V, or
VIN 0.2V, f = 0
— 15
— 25
— 15
— 25
— 15
— 25
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2
3
4
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98
3










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Номер в каталогеОписаниеПроизводители
62LV12816128K x 16 CMOS STATIC RAMIntegrated Silicon Solution  Inc
Integrated Silicon Solution Inc

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