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PDF 6AM13 Data sheet ( Hoja de datos )
| Número de pieza | 6AM13 | |
| Descripción | Silicon N-Channel/P-Channel Complementary Power MOS FET Array | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, ID = 5 A
P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, ID = –5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
ADE-208-1217 (Z)
1st. Edition
Mar. 2001
1 page  
Typical Transfer Characteristics
–20
–16 TC = 25°C
VDS = –10 V
Pulse Test –25°C
–12
75°C
–8
–4
0 –1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
VGS = –4 V
–10 V
0.05
0.02
0.01
0.005
–1
–2 –5 –10 –20 –50 –100
Drain Current ID (A)
6AM13
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–2.0
Pulse Test
–1.6
–15 A
–1.2
–10 A
–0.8
–0.4
–5 A
ID = –2 A
0 –2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.25
Pulse Test
0.20
–10 A
–2, –5 A
0.15
VGS = –4 V
–15 A
0.10
0.05
VGS = –10 V –2, –5, –10 A
0
–40 0
40 80 120
Case Temperature TC (°C)
160
5
5 Page 
Package Dimensions
6AM13
As of January, 2001
Unit: mm
φ 3.2
31.3
+0.2
–0.3
24.4 ± 0.1
16.4 ± 0.3
3.8
5.0 ± 0.2
2.0 ± 0.1
2.2 ± 0.2
2.54 1.4 0.85 ± 0.1
1 2 3 4 5 6 7 8 9 10 11 12
0.55
+0.1
–0.06
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
SP-12TA
—
—
6.1 g
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 6AM13.PDF ] | |
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