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6AM14 PDF даташит

Спецификация 6AM14 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel/P-Channel Power MOS FET Array».

Детали детали

Номер произв 6AM14
Описание Silicon N-Channel/P-Channel Power MOS FET Array
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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6AM14 Даташит, Описание, Даташиты
6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• High speed switching
• High density mounting
Outline









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6AM14 Даташит, Описание, Даташиты
6AM14
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at 6 Drive operation
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Pch*2
Tch
Tstg
Ratings
Nch Pch
60 –60
±20 ±20
7 –7
28 –28
7 –7
42
4.8
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2









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6AM14 Даташит, Описание, Даташиты
6AM14
Electrical Characteristics N Channel (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DS 60
S
Gate to source breakdown
voltage
V(BR)GS ±20
S
Gate to source leak current
IGSS —
Zero gate voltage drain current IDSS —
Gate to source cutoff voltage VGS(off) 0.5
Static drain to source on state RDS(on) —
resistance
Forward transfer admittance |yfs|
4.0
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Typ Max Unit Test conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
— ±10
— 250
— 1.5
0.14 0.2
µA
µA
V
0.22 0.5
6.5 —
S
500 —
240 —
30 —
15 —
90 —
110 —
250 —
1.0 —
170 —
pF
pF
pF
ns
ns
ns
ns
V
ns
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 4 A
VGS = 4 V*1
ID = 2 A
VGS = 2.5 V*1
ID = 4 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = 10 V, ID = 4 A
RL = 7.5
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0
diF/dt = 50 A/µs
3










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6AM14Silicon N-Channel/P-Channel Power MOS FET ArrayHitachi Semiconductor
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