6AM15 PDF даташит
Спецификация 6AM15 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N/P Channel MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | 6AM15 |
Описание | Silicon N/P Channel MOS FET High Speed Power Switching |
Производители | Hitachi Semiconductor |
логотип |
14 Pages
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6AM15
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
N Channel : RDS(on) = 0.045 Ω typ.
P Channel : RDS(on) = 0.085 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
Outline
ADE-208-719 (Z)
1st. Edition
February 1999
No Preview Available ! |
6AM15
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Channel dissipation
Pch (Tc = 25°C)
Note2
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 6 Devices operation
3. Value at Ta = 25°C, Rg ≥ 50 Ω
Ratings
Nch
60
±20
10
40
Pch
–60
±20
–10
–40
10 –10
10 –10
8.5
42
4.8
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Electrical Characteristics (N Channel) (Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
Symbol Min
V(BR)DS 60
S
V(BR)GS ±20
S
IGSS —
IDSS —
VGS(off) 1.5
RDS(on) —
resistance
RDS(on) —
Forward transfer admittance
|yfs| 5.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
—
—
—
—
Typ Max Unit Test Conditions
— — V ID = 10 mA, VGS = 0
— — V IG = ±100 µA, VDS = 0
—
—
—
0.045
±10
10
2.5
0.060
µA
µA
V
Ω
0.070 0.115 Ω
9 —S
500 —
260 —
110 —
10 —
pF
pF
pF
ns
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 5 A, VGS = 10 V
Note5
ID = 5 A, VGS = 4 V
Note5
ID = 5 A, VDS = 10 V
Note5
VDS = 10 V
VGS = 0
f = 1 MHz
VGS =10 V, ID = 5 A
2
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Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 5. Pulse test
tr
td(off)
tf
VDF
trr
—
—
—
—
—
50 —
90 —
100 —
0.9 —
52 —
6AM15
ns RL = 6 Ω
ns
ns
V IF =10 A, VGS = 0
ns IF =10 A, VGS = 0
diF/ dt = 50A/ µs
Electrical Characteristics (P Channel) (Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
Symbol Min
V(BR)DS –60
S
V(BR)GS ±20
S
IGSS —
IDSS —
VGS(off) –1.0
RDS(on) —
resistance
RDS(on) —
Forward transfer admittance
|yfs| 5.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 5. Pulse test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
—
—
—
—
—
—
—
—
—
Typ Max Unit Test Conditions
— — V ID = –10 mA, VGS = 0
— — V IG = ±100 µA, VDS = 0
—
—
—
0.085
±10
–10
–2.0
0.105
µA
µA
V
Ω
0.115 0.165 Ω
9 —S
850
420
110
12
55
130
70
–0.95
65
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
ns
VGS = ±16 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –10 V, I D = –1 mA
ID = –5 A, VGS = –10 V
Note5
ID = –5 A, VGS = –4 V
Note5
ID = –5 A, VDS = –10 V
Note5
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V, ID = –5 A
RL = 6 Ω
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0
diF/ dt = 50 A/ µs
_
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