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Número de pieza | 6MBI50S-120 | |
Descripción | IGBT(1200V/50A) | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 6MBI50S-120 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 6MBI50S-120
IGBT MODULE ( S series)
1200V / 50A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25°C
current
Tc=80°C
1ms Tc=25°C
Tc=80°C
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
VCES
VGES
IC
IC pulse
-IC
-IC pulse
PC
Tj
Tstg
Vis
Mounting *1
Rating
Unit
1200
V
±20 V
75 A
50
150 A
100
50 A
100 A
360 W
+150
°C
-40 to +125
°C
AC 2500 (1min.) V
3.5 N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
IGBT Modules
Equivalent Circuit Schematic
13(P)
1(G u)
2 (E u)
3(G x)
4 (E x )
17(N)
5(G v)
6 (E v)
16(U)
7(G y)
8 (E y)
9(G w)
1 0 (E w)
15(V)
11(G z)
1 2 (E z)
14(W )
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
Reverse recovery time
trr
Characteristics
Min.
Typ.
––
––
5.5 7.2
– 2.3
– 2.8
– 6000
– 1250
– 1100
– 0.35
– 0.25
– 0.1
– 0.45
– 0.08
– 2.5
– 2.0
––
Max.
1.0
0.2
8.5
2.65
–
–
–
–
1.2
0.6
–
1.0
0.3
3.3
–
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
Tj=25°C VGE=15V, IC=50A
Tj=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=50A
VGE=±15V
RG=24Ω
Tj=25°C
Tj=125°C
IF=50A
IF=50A, VGE=0V
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
–
– 0.35 IGBT
Thermal resistance
Rth(j-c)
–
– 0.75 FWD
Rth(c-f)*2
–
0.05 –
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 6MBI50S-120.PDF ] |
Número de pieza | Descripción | Fabricantes |
6MBI50S-120 | IGBT(1200V/50A) | Fuji Electric |
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