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6N139 PDF даташит

Спецификация 6N139 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «IRED & PHOTO IC (CURRENT LOOP DRIVER/ LOW INPUT CURRENT LINE RECEIVER/ COMS LOGIC INTERFACE)».

Детали детали

Номер произв 6N139
Описание IRED & PHOTO IC (CURRENT LOOP DRIVER/ LOW INPUT CURRENT LINE RECEIVER/ COMS LOGIC INTERFACE)
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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6N139 Даташит, Описание, Даташиты
TOSHIBA Photocoupler GaAAs Ired & Photo IC
6N138, 6N139
6N138,6N139
Current Loop Driver
Low Input Current Line Receiver
CMOS Logic Interface
The TOSHIBA 6N138 and 6N139 consists of a GaAAs infrared emitting
diode coupled with a split-Darlington output configuration.
A high speed GaAAs Ired manufactured with an unique LPE junction, has
the virtue of fast rise and fall time at low drive current.
Isolation voltage: 2500 Vrms (min)
Current transfer ratio
: 6N138 300% (min) (IF=1.6mA)
: 6N139 400% (min) (IF=0.5mA)
Switching time: 6N138 tPHL = 10μs (max)
tPLH = 35μs (max)
6N139 tPHL = 1μs (max)
tPLH = 7μs (max)
UL recognized: UL1577, file no. E67349
Unit: mm
Pin Configuration (top view)
1 : N.C.
1 8 2 : Anode
3 : Cathode
2 7 4 : N.C.
5 : Gnd
3
6 6 : O utput
7 : O utput Base
8 : VCC
45
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Schematic
2
+
IF
VF
-
3
VCC
8
IC C
IO
6
VO
IB 7
VB
5
GND
Start of commercial production
1988/02
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6N139 Даташит, Описание, Даташиты
Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C)
6N138,6N139
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Total pulse forward current
Reverse voltage
Diode power dissipation
Output current
Emitterbase reverse voltage
Supply voltage
Output voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s) (*4)
Isolation voltage (1minute, R.H.60%)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
IF
IFP(*1)
IFP(*2)
VR
PD
IO
VEB
VCC(*3)
VO(*3)
PO
Topr
Tstg
Tsol
BVS(**)
20
40
1
5
35
60
0.5
0.5 to 18
0.5 to 18
100
0 to 70
55 to 125
260
2500
3540
mA
mA
A
V
mW
mA
V
V
V
mW
°C
°C
°C
Vrms
Vdc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(*) JEDEC registered data
(**) Not registered JEDEC
(*1) 50% duty cycle, 1ms pulse width
(*2) Pulse width 1μs, 300pps
(*3) 6N1380.5 to 7V
(*4) 1.6mm below seating plane
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6N139 Даташит, Описание, Даташиты
6N138,6N139
Electrical Characteristics
Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min (*5)Typ. Max
Unit
Current transfer
ratio
(Note 5, 6)
6N139
6N138
CTR(*)
IF=0.5mA, VO=0.4V
VCC=4.5V
IF=1.6mA, VO=0.4V
VCC=4.5V
Logic low output
voltage
(Note 6)
Logic high output
current
(Note 6)
Logic low supply current
Logic high supply current
6N139
6N138
6N139
6N138
(Note 6)
(Note 6)
VOL
IOH(*)
ICCL
ICCH
IF=1.6mA, IO=6.4mA
VCC=4.5V
IF=5mA, IO=15mA
VCC=4.5V
IF=12mA, IO=24mA
VCC=4.5V
IF=1.6mA, IO=4.8mA
VCC=4.5V
IF=0mA, VO=VCC=18V
IF=0mA, VO=VCC=7V
IF=1.6mA, VO=Open
VCC=5V
IF=0mA, VO=Open, VCC=5V
Input forward voltage
Input reverse breakdown voltage
Temperature coefficient of forward voltage
Input capacitance
Resistance (inputoutput)
VF(*) IF=1.6mA, Ta=25°C
BVR(*) IR=10μA, Ta=25°C
VF / Ta IF=1.6mA
CIN f=1MHz, VF=0
RIO
VIO=500V
R.H.60%
(Note 7),
Capacitance (inputoutput)
CIO f=1MHz
(Note 7)
(**) JEDEC registered data.
(*5) All typical values are at Ta=25°C and VCC=5V, unless otherwise noted.
400
500
300
5
800
900
600
0.1
0.1
0.2
0.1
0.05
0.05
0.2
10
1.65
1.9
60
1012
0.6
%
0.4
0.4
V
0.4
0.4
100
μA
250
mA
nA
1.7 V
V
mV / °C
pF
pF
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