6N139 PDF даташит
Спецификация 6N139 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «IRED & PHOTO IC (CURRENT LOOP DRIVER/ LOW INPUT CURRENT LINE RECEIVER/ COMS LOGIC INTERFACE)». |
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Детали детали
Номер произв | 6N139 |
Описание | IRED & PHOTO IC (CURRENT LOOP DRIVER/ LOW INPUT CURRENT LINE RECEIVER/ COMS LOGIC INTERFACE) |
Производители | Toshiba Semiconductor |
логотип |
6 Pages
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TOSHIBA Photocoupler GaAℓAs Ired & Photo IC
6N138, 6N139
6N138,6N139
Current Loop Driver
Low Input Current Line Receiver
CMOS Logic Interface
The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting
diode coupled with a split-Darlington output configuration.
A high speed GaAℓAs Ired manufactured with an unique LPE junction, has
the virtue of fast rise and fall time at low drive current.
• Isolation voltage: 2500 Vrms (min)
• Current transfer ratio
: 6N138 − 300% (min) (IF=1.6mA)
: 6N139 − 400% (min) (IF=0.5mA)
• Switching time: 6N138 − tPHL = 10μs (max)
− tPLH = 35μs (max)
6N139 − tPHL = 1μs (max)
− tPLH = 7μs (max)
• UL recognized: UL1577, file no. E67349
Unit: mm
Pin Configuration (top view)
1 : N.C.
1 8 2 : Anode
3 : Cathode
2 7 4 : N.C.
5 : Gnd
3
6 6 : O utput
7 : O utput Base
8 : VCC
45
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Schematic
2
+
IF
VF
-
3
VCC
8
IC C
IO
6
VO
IB 7
VB
5
GND
Start of commercial production
1988/02
1 2014-09-01
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Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C)
6N138,6N139
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Total pulse forward current
Reverse voltage
Diode power dissipation
Output current
Emitter−base reverse voltage
Supply voltage
Output voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s) (*4)
Isolation voltage (1minute, R.H.≤ 60%)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
IF
IFP(*1)
IFP(*2)
VR
PD
IO
VEB
VCC(*3)
VO(*3)
PO
Topr
Tstg
Tsol
BVS(**)
20
40
1
5
35
60
0.5
−0.5 to 18
−0.5 to 18
100
0 to 70
−55 to 125
260
2500
3540
mA
mA
A
V
mW
mA
V
V
V
mW
°C
°C
°C
Vrms
Vdc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(*) JEDEC registered data
(**) Not registered JEDEC
(*1) 50% duty cycle, 1ms pulse width
(*2) Pulse width 1μs, 300pps
(*3) 6N138… −0.5 to 7V
(*4) 1.6mm below seating plane
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6N138,6N139
Electrical Characteristics
Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min (*5)Typ. Max
Unit
Current transfer
ratio
(Note 5, 6)
6N139
6N138
CTR(*)
IF=0.5mA, VO=0.4V
VCC=4.5V
IF=1.6mA, VO=0.4V
VCC=4.5V
Logic low output
voltage
(Note 6)
Logic high output
current
(Note 6)
Logic low supply current
Logic high supply current
6N139
6N138
6N139
6N138
(Note 6)
(Note 6)
VOL
IOH(*)
ICCL
ICCH
IF=1.6mA, IO=6.4mA
VCC=4.5V
IF=5mA, IO=15mA
VCC=4.5V
IF=12mA, IO=24mA
VCC=4.5V
IF=1.6mA, IO=4.8mA
VCC=4.5V
IF=0mA, VO=VCC=18V
IF=0mA, VO=VCC=7V
IF=1.6mA, VO=Open
VCC=5V
IF=0mA, VO=Open, VCC=5V
Input forward voltage
Input reverse breakdown voltage
Temperature coefficient of forward voltage
Input capacitance
Resistance (input−output)
VF(*) IF=1.6mA, Ta=25°C
BVR(*) IR=10μA, Ta=25°C
∆VF / ∆Ta IF=1.6mA
CIN f=1MHz, VF=0
RI−O
VI−O=500V
R.H.≤ 60%
(Note 7),
Capacitance (input−output)
CI−O f=1MHz
(Note 7)
(**) JEDEC registered data.
(*5) All typical values are at Ta=25°C and VCC=5V, unless otherwise noted.
400
500
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
⎯
⎯
⎯
⎯
800
900
600
0.1
0.1
0.2
0.1
0.05
0.05
0.2
10
1.65
⎯
−1.9
60
1012
0.6
⎯
%
⎯
⎯
0.4
0.4
V
0.4
0.4
100
μA
250
⎯ mA
⎯ nA
1.7 V
⎯V
⎯ mV / °C
⎯ pF
⎯Ω
⎯ pF
3 2014-09-01
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