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6N80 PDF даташит

Спецификация 6N80 изготовлена ​​​​«ETC» и имеет функцию, называемую «N-Channel Enhancement Mode».

Детали детали

Номер произв 6N80
Описание N-Channel Enhancement Mode
Производители ETC
логотип ETC логотип 

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6N80 Даташит, Описание, Даташиты
Standard
Power MOSFET
N-Channel Enhancement Mode
VDSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
ID25
RDS(on)
6 A 1.8
6 A 1.4
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
P
D
TJ
T
JM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
800 V
800 V
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
6
24
180
-55 ... +150
150
-55 ... +150
A
A
W
°C
°C
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
VDSS
V
GS(th)
I
GSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 6N80
6N80A
Pulse test, t 300 µs, duty cycle d 2 %
800
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8
1.4
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Applications
q Switch-mode and resonant-mode
power supplies
q Motor controls
q Uninterruptible Power Supplies (UPS)
q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629









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6N80 Даташит, Описание, Даташиты
IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
Symbol
gfs
Ciss
C
oss
Crss
td(on)
tr
td(off)
t
f
Q
g(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
V = 0 V, V = 25 V, f = 1 MHz
GS DS
46
2800
250
100
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 2 Ω, (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
35 100
40 110
100 200
60 100
ns
ns
ns
ns
110 130
15 30
50 70
nC
nC
nC
0.7 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
6A
24 A
1.5 V
t
rr
I
F
=
I,
S
-di/dt
=
100
A/µs,
V
R
=
100
V
900 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b 2.87 3.12
2
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AA (IXTM) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter
Min. Max.
A 6.4 11.4
A1 3.42
b .97 1.09
D 22.22
e 10.67 11.17
e1 5.21 5.71
L 7.93
p 3.84 4.19
p1 3.84 4.19
q 30.15 BSC
R 13.33
R1 4.77
s 16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675









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6N80 Даташит, Описание, Даташиты
IXTH 6N80
IXTM 6N80
IXTH6N80A
IXTM6N80A
Fig. 1 Output Characteristics
9
8
TJ = 25°C
7
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
VDS - Volts
7V
6V
25 30
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 10V
2.2
2.0 VGS = 15V
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N80A
5
4 6N80
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Fig. 2 Input Admittance
9
8
7
6
5
TJ = 25°C
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 2.5A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BV CES
1.1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629










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