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J106 PDF даташит

Спецификация J106 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel Switch».

Детали детали

Номер произв J106
Описание N-Channel Switch
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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J106 Даташит, Описание, Даташиты
J105 / J106 / J107
N-Channel Switch
Description
This device is designed for analog or digital switching
applications where very low on resistance is manda-
tory. Sourced from Process 59.
September 2013
Ordering Informations
Part Number
J105
J106
J107
Marking
J105
J106
J107
Package
TO-92 3L
Packing Method
Bulk
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VDG
VGS
IGF
TJ, Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
-25
10
-55 to +150
V
V
mA
°C
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These ratings are based on a maximum junction temperature of 150°C.
3. These are steady-state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
© 1997 Fairchild Semiconductor Corporation
J105 / J106 / J107 Rev. 1.1.1
1
www.fairchildsemi.com









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J106 Даташит, Описание, Даташиты
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Maximum
Units
PD
Power Dissipation
Derate above 25°C
625 mW
5.0 mW/°C
RθJC Thermal Resistance, Junction to Case
125 °C/W
RθJA Thermal Resistance, Junction to Ambient
357 °C/W
Note:
4. PCB board size FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown
Voltage
IGSS
ID(off)
Gate Reverse Current
Gate-Source Cut-Off Voltage
VGS(off) Gate-Source Cut-Off Voltage
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain
Current(5)
RDS(on) Drain-Source On Resistance
Test Conditions
IG = -10 μA, VDS = 0
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C
VDS = -5.0 V, VGS = -10 V
J105
VDS = 5.0 V, ID = 1.0 mA
J106
J107
VDS = 15 V, IGS = 0
VDS 0.1 V, VGS = 0
J105
J106
J107
J105
J106
J107
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Cdg(off)
Csg(off)
Drain-Gate On Capacitance
Source-Gate On Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = 10 V, f = 1.0 MHz
Note:
5. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min
-25
-4.5
-2.0
-0.5
500
200
100
Max Units
-3.0
-200
3.0
-10.0
-6.0
-4.5
V
nA
nA
V
mA
3.0
6.0 Ω
8.0
160 pF
35
pF
pF
© 1997 Fairchild Semiconductor Corporation
J105 / J106 / J107 Rev. 1.1.1
2
www.fairchildsemi.com









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J106 Даташит, Описание, Даташиты
Typical Performance Characteristic
350
T = 25 oC
A
300
V = -4.5 V max
GS(off)
250
V =0V
GS
200 V = -1 V
GS
150
100
V = -2 V
GS
50
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Drain-Source Volatage, V [V]
DS
Figure 1. Common Drain-Source Characteristics
500
T = 25 oC
A
V = -4.5 V max
GS(off)
400
V =0V
GS
V = -0.1 V
GS
V = -0.2 V
GS
300
200
V = -0.3 V
GS
V = -0.4 V
GS
V = -0.5 V
GS
100
0
012345
Drain-Source Voltage, V [V]
DS
Figure 2. Common Drain-Source Characteristics
Figure 3. Parameter Interactions
Figure 4. Capacitance vs. Voltage
Figure 5. Normalized Drain Resistance vs.
Bias Voltage
Figure 6. On Resistance vs. Drain Current
© 1997 Fairchild Semiconductor Corporation
J105 / J106 / J107 Rev. 1.1.1
3
www.fairchildsemi.com










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