Datasheet J108 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	J108	P-Channel MOSFET, 2SJ108	Toshiba	data
2	J108	JFET GENERAL-PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/\ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C	Motorola Semiconductors	transistor
3	J108	N-Channel JFETs J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2 to –6 –0.5 to –4 rDS(on) Max (W) 8 12 18 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 SST108 SST109 SST110 FEATURES D Low On-Resist	Vishay	data
4	J108	N-channel silicon junction FETs DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product speciﬁcation Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product speciﬁcation N-channel silicon junction FETs FEATURES • High speed swi	NXP Semiconductors	data
5	J108	N-Channel Switch J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 1 TO-92 1. Drain 2. Source 3. Gate 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Abs	Fairchild Semiconductor	data

J10 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	J105	N-Channel JFETs J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 FEATURES D D D D D Low On-Resistance: J105 < 3 W Fast Switching—tON: 14 n	Vishay Telefunken	data
2	J105	N-Channel Switch J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering Informations Part Number J105 J106 J107 Marking	Fairchild Semiconductor	data
3	J106	N-Channel Switch J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering Informations Part Number J105 J106 J107 Marking	Fairchild Semiconductor	data
4	J106	N-Channel JFETs J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 FEATURES D D D D D Low On-Resistance: J105 < 3 W Fast Switching—tON: 14 n	Vishay Telefunken	data
5	J107	JFET GENERAL-PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/\ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C	Motorola Semiconductors	transistor
6	J107	N-Channel Switch J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering Informations Part Number J105 J106 J107 Marking	Fairchild Semiconductor	data
7	J107	N-Channel JFETs J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 FEATURES D D D D D Low On-Resistance: J105 < 3 W Fast Switching—tON: 14 n	Vishay Telefunken	data

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Número de pieza	Descripción	Fabricantes	PDF
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