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S3D PDF даташит

Спецификация S3D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «General-Purpose Rectifiers».

Детали детали

Номер произв S3D
Описание General-Purpose Rectifiers
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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S3D Даташит, Описание, Даташиты
May 2015
S3A - S3N
General-Purpose Rectifiers
Features
• Low-Profile Package
• Glass-Passivated Junction
• UL Flammability Classification: 94V-0
• UL Certified, UL #E258596
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
Ordering Informations
Part Number
S3A
S3B
S3D
S3G
S3J
S3K
S3M
S3N
Top Mark
S3A
S3B
S3D
S3G
S3J
S3K
S3M
S3N
ELECTRICAL SYMBOL
Package
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
DO-214AB (SMC)
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
S3A S3B S3D S3G S3J S3K S3M S3N
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current TL = 105°C
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
50
100 200 400 600 800 1000 1200
3.0
100
V
A
A
TSTG Storage Temperature Range
TJ Operating Junction Temperature Range
-55 to +150
-55 to +150
°C
°C
© 2001 Fairchild Semiconductor Corporation
S3A - S3N Rev. 2.7
www.fairchildsemi.com









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S3D Даташит, Описание, Даташиты
Thermal Characteristics(1)
Symbol
Parameter
Value
PD
RθJA
RθJL
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
2.6
100
13
Note:
1. Device is mounted on FR-4 PCB 0.013 mm. Land pattern size: refer to the package drawing.
Trace size: force line = 50 mil & sense line = 4 mil.
Unit
W
°C/W
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Conditions
S3A S3B S3D S3G S3J S3K S3M S3N
VF Maximum Forward Voltage IF = 3.0 A
trr
Maximum Reverse Recovery
Time
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
IR
Maximum Reverse Current
at rated VR
TA = 25°C
TA = 125°C
CT Typical Total Capacitance
VR = 4.0 V,
f = 1.0 MHz
1.2
2.5
5
250
60
Unit
V
μs
μA
pF
© 2001 Fairchild Semiconductor Corporation
S3A - S3N Rev. 2.7
2
www.fairchildsemi.com









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S3D Даташит, Описание, Даташиты
Typical Performance Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50 60 70 80 90 100 110 120 130 140 150
Lead Temperature, [oC]
Figure 1. Forward Current Derating Curve
120
100
80
60
40
8.3ms Single Half Sine-Wave
20 JEDEC Method
0
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
100
50
TJ = 25º C
10
5
1
5 10
50 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
100
10
1
TJ = 25º C
Pulse Width = 300μs
2% Duty Cycle
0.1
0.01
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
100
TA = 125ºC
10
1
0.1
0
TA = 25ºC
20 40 60 80 100 120 140
% of Reverse Voltage, VR[V]
Figure 4. Reverse Current vs. Reverse Voltage
© 2001 Fairchild Semiconductor Corporation
S3A - S3N Rev. 2.7
3
www.fairchildsemi.com










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