S505 PDF даташит
Спецификация S505 изготовлена «Vishay Telefunken» и имеет функцию, называемую «MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage». |
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Детали детали
Номер произв | S505 |
Описание | MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage |
Производители | Vishay Telefunken |
логотип |
5 Pages
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S505T/S505TR/S505TRW
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Features
D Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D High AGC-range with less steep slope
D Integrated gate protection diodes
C block
AGC
G2
C block
RF in
G1
VDD
RG1
RFC
D
S C block
VDD
RF out
13650
D Low noise figure
D High gain
D Improved cross modulation at gain reduction
D SMD package
21
12
94 9279
13 579
34
S505T Marking: 505
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
94 9278
43
95 10831
S505TR Marking: 55R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
13 654
13 566
43
S505TRW Marking: W05
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85044
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
No Preview Available ! |
S505T/S505TR/S505TRW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
8
30
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
mID = 10 A, VG2S = VG1S = 0
breakdown voltage
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
±VG2S = 5 V, VG1S = VDS = 0
WVDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 220 k
mVDS = 5 V, VG2S = 4, ID = 20 A
W mVDS = VRG1 = 5 V, RG1 = 220 k , ID = 20 A
Symbol Min Typ Max Unit
V(BR)DSS 15
V
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
10 V
+IG1SS
20 nA
±IG2SS
20 nA
IDSO
10 13 18 mA
VG1S(OFF) 0.4
1.2 V
VG2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
W WBy setting RG1 smaller than 220 k , e.g., 180 k , typical value of IDSO will raise and improved intermodulation
behavior will be performed.
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85044
Rev. 3, 20-Jan-99
No Preview Available ! |
S505T/S505TR/S505TRW
Vishay Telefunken
Electrical AC Characteristics
VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Symbol Min Typ Max Unit
y21s 28
35 mS
Cissg1
2.3 2.7 pF
Crss 25 fF
Coss
1.1 pF
Gps 28 dB
Gps 17 21
DGps 45
dB
dB
F 1 dB
F 1.3 dB
Dimensions of S505T in mm
96 12240
Document Number 85044
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
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