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S524AD0XF1 PDF даташит

Спецификация S524AD0XF1 изготовлена ​​​​«Samsung semiconductor» и имеет функцию, называемую «128K/256K-bit Serial EEPROM for Low Power».

Детали детали

Номер произв S524AD0XF1
Описание 128K/256K-bit Serial EEPROM for Low Power
Производители Samsung semiconductor
логотип Samsung semiconductor логотип 

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S524AD0XF1 Даташит, Описание, Даташиты
S524AD0XD1/D0XF1
128K/256K-bit
Serial EEPROM
for Low Power
Data Sheet
OVERVIEW
The S524AD0XD1/D0XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the
standard I2C™-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. It has
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into
the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/D0XF1 is its support for
fast mode and standard mode.
FEATURES
I2C-Bus Interface
Two-wire serial interface
Automatic word address increment
EEPROM
128K/256K-bit (16,384/32,768 bytes) storage
area
64-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
500,000 erase/write cycles
50 years data retention
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 400 µA at 5.5 V
— Maximum stand-by current: < 1 µA at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 400 kHz at standard mode
— 1 MHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, and TSSOP
8-1









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S524AD0XF1 Даташит, Описание, Даташиты
S524AD0XD1/D0XF1 SERIAL EEPROM
DATA SHEET
SDA
WP
SCL
A0
A1
A2
Start/Stop
Logic
Slave Address
Comparator
Control Logic
Word Address
Pointer
HV Generation
Timing Control
Row
decoder
EEPROM
Cell Array
16,384 x 8 bits
32,768 x 8 bits
DOUT and ACK
Column Decoder
Data Register
Figure 8-1. S524AD0XD1/D0XF1 Block Diagram
8-2









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S524AD0XF1 Даташит, Описание, Даташиты
DATA SHEET
S524AD0XD1/D0XF1 SERIAL EEPROM
VCC WP SCL SDA
S524AD0XD1/D0XF1
A0 A1 A2 VSS
NOTE: The S524AD0XD1/D0XF1 is available
in 8-pin DIP, and TSSOP package.
Figure 8-2. Pin Assignment Diagram
Name
Type
Table 8-1. S524AD0XD1/D0XF1 Pin Descriptions
Description
A0, A1, A2
VSS
SDA
SCL
WP
VCC
Input
I/O
Input
Input
Input pins for device address selection. To configure a device address,
these pins should be connected to the VCC or VSS of the device.
These pins are internally pulled down to VSS.
Ground pin.
Bi-directional data pin for the I2C-bus serial data interface. Schmitt
trigger input and open-drain output. An external pull-up resistor must
be connected to VDD.
Schmitt trigger input pin for serial clock input.
Input pin for hardware write protection control. If you tie this pin to VCC,
the write function is disabled to protect previously written data in the
entire memory; if you tie it to VSS, the write function is enabled.
This pin is internally pulled down to VSS.
Single power supply.
NOTE: See the following page for diagrams of pin circuit types 1, 2, and 3.
Circuit
Type
1
3
2
1
8-3










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Номер в каталогеОписаниеПроизводители
S524AD0XF1128K/256K-bit Serial EEPROM for Low PowerSamsung semiconductor
Samsung semiconductor

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