S524C80D41 PDF даташит
Спецификация S524C80D41 изготовлена «Samsung semiconductor» и имеет функцию, называемую «1K/2K/4K/8K-bit Serial EEPROM». |
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Детали детали
Номер произв | S524C80D41 |
Описание | 1K/2K/4K/8K-bit Serial EEPROM |
Производители | Samsung semiconductor |
логотип |
20 Pages
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S524C20D11/20D21/80D41/80D81
1K/2K/4K/8K-bit
Serial EEPROM
Data Sheet
OVERVIEW
The S524C20D11/20D21/80D41/80D81 serial EEPROM has a 1,024/2,048/4,096/8,192-bit (128/256/512/1,024-
byte) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsungs’ most
advanced CMOS technology. One of its major feature is a hardware-based write protection circuit for the entire
memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-
page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another
significant feature of the S524C20D11/20D21/80D41/80D81 is its support for fast mode and standard mode.
FEATURES
I2C-Bus Interface
• Two-wire serial interface
• Automatic word address increment
EEPROM
• 1K/2K/4K/8K-bit (128/256/512/1,024-byte)
storage area
• 16-byte page buffer
• Typical 3.5 ms write cycle time with
auto-erase function
• Hardware-based write protection for the entire
EEPROM (using the WP pin)
• EEPROM programming voltage generated
on chip
• 1,000,000 erase/write cycles
• 100 years data retention
Operating Characteristics
• Operating voltage
— 2.5 V to 5.5 V (write)
— 2.2 V to 5.5 V (read)
• Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 200 µA at 5.5 V
— Maximum stand-by current: < 5 µA at 3.3 V
• Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
• Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
• Electrostatic discharge (ESD)
— 3,000 V (HBM)
— 300 V (MM)
Packages
• 8-pin DIP, SOP, and TSSOP
3-1
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S524C20D11/20D21/80D41/80D81 SERIAL EEPROM
DATA SHEET
SDA
WP
SCL
A0
A1
A2
Start/Stop
Logic
Slave Address
Comparator
Control Logic
Word Address
Pointer
HV Generation
Timing Control
Row
decoder
EEPROM
Cell Array
128 x 8 bits
256 x 8 bits
512 x 8 bits
1024 x 8 bits
Column Decoder
DOUT and ACK
Data Register
Figure 3-1. S524C20D11/20D21/80D41/80D81 Block Diagram
3-2
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DATA SHEET
S524C20D11/20D21/80D41/80D81 SERIAL EEPROM
VCC WP SCL SDA
S524C20D11/20D21/
80D41/80D81
A0 A1 A2 VSS
NOTE: The S524C20D11/20D21/80D41/80D81 is available
in 8-pin DIP, SOP, and TSSOP package.
Figure 3-2. Pin Assignment Diagram
Name
Table 3-1. S524C20D11/20D21/80D41/80D81 Pin Descriptions
Type
Description
A0, A1, A2
VSS
SDA
SCL
WP
VCC
Input
–
I/O
Input
Input
–
Input pins for device address selection. To configure a device address,
these pins should be connected to the VCC or VSS of the device.
Ground pin.
Bi-directional data pin for the I2C-bus serial data interface. Schmitt
trigger input and open-drain output. An external pull-up resistor must
be connected to VCC. Typical values for this pull-up resistor are 4.7 kΩ
(100 kHz) and 1 kΩ (400 kHz).
Schmitt trigger input pin for serial clock input.
Input pin for hardware write protection control. If you tie this pin to VCC,
the write function is disabled to protect previously written data in the
entire memory; if you tie it to VSS, the write function is enabled.
Single power supply.
NOTE: See the following page for diagrams of pin circuit types 1, 2, and 3.
Circuit
Type
1
–
3
2
1
–
3-3
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Номер в каталоге | Описание | Производители |
S524C80D40 | 1K/2K/4K/8K-bit Serial EEPROM with software write protect | Samsung semiconductor |
S524C80D41 | 1K/2K/4K/8K-bit Serial EEPROM | Samsung semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |